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Volumn 2, Issue 2, 2003, Pages 761-764

A CMOS compatible SiC accelerometer

Author keywords

[No Author keywords available]

Indexed keywords

ACCELEROMETERS; ALUMINUM; CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTROCHEMICAL ELECTRODES; ETCHING; MICROMACHINING; MICROPROCESSOR CHIPS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYIMIDES; SILICON CARBIDE;

EID: 1542544594     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (20)

References (7)
  • 1
    • 0032138896 scopus 로고    scopus 로고
    • Micromachined inertial sensors
    • August
    • N. Yazdi et al., Micromachined inertial sensors, Proc. of the IEEE, Vol.86, No.8, August 1998 pp. 1640-1659.
    • (1998) Proc. of the IEEE , vol.86 , Issue.8 , pp. 1640-1659
    • Yazdi, N.1
  • 2
    • 0035765665 scopus 로고    scopus 로고
    • Proc. Micromachining and Microfabrication Process Tech.
    • H.T.M. Pham et al., Proc. Micromachining and Microfabrication Process Tech., Proceedings of SPIE 2001, Vol.4557, pp. 272-279.
    • Proceedings of SPIE 2001 , vol.4557 , pp. 272-279
    • Pham, H.T.M.1
  • 3
    • 0042284297 scopus 로고    scopus 로고
    • Low-stress PECVD SiC thin films for IC-compatible microstructures
    • P.M.Sarro et al., Low-stress PECVD SiC thin films for IC-compatible microstructures, Sensors and Actuators A67 (1998), pp. 175-180.
    • (1998) Sensors and Actuators , vol.A67 , pp. 175-180
    • Sarro, P.M.1
  • 4
    • 0035768610 scopus 로고    scopus 로고
    • Damping caused by the gas flow in the holes of perforated structures
    • 17-19 Dec., Adelaide, Australia
    • H. Yang, M. Bao, L. Pakula, P. J. French. Damping caused by the gas flow in the holes of perforated structures, Proceedings of SPIE, Vol.4593, 17-19 Dec. 2001, Adelaide, Australia, pp.307-313.
    • (2001) Proceedings of SPIE , vol.4593 , pp. 307-313
    • Yang, H.1    Bao, M.2    Pakula, L.3    French, P.J.4
  • 6
    • 0038250575 scopus 로고    scopus 로고
    • Influence of Deposition Parameters and Temperature on Stress and Strian of Insitu doped PECVD Silicon Carbide
    • H.T.M. Pham, C.R. de Boer, L. Pakula, P.M. Sarro, Influence of Deposition Parameters and Temperature on Stress and Strian of Insitu doped PECVD Silicon Carbide, Materials Science Forum, vols. 389-393 (2002), pp. 759-762.
    • (2002) Materials Science Forum , vol.389-393 , pp. 759-762
    • Pham, H.T.M.1    De Boer, C.R.2    Pakula, L.3    Sarro, P.M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.