Efficient Near Infrared Si/Ge Quantum Dot Photo-Detector Based on a Heterojunction Bipolar Transistor

Materials Research Society Symposium - Proceedings

Volumn 770, Issue , 2003, Pages 171-182

  Elfving, Anders ^a   Larsson, Mats ^a   Holtz, Per Olof ^a   Hansson, Göran V ^a   Ni, Wei Xin ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; CAPACITANCE; CURRENT DENSITY; EMITTER COUPLED LOGIC CIRCUITS; FREQUENCY MODULATION; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; PHOTODIODES; PHOTOTRANSISTORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CURRENT AMPLIFICATION; TIME-RESOLVED (TR) MEASUREMENTS;

PHOTODETECTORS;

EID: 1542364472     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-770-i2.2     Document Type: Conference Paper

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