The impact of the electron spin on charge carrier recombination - The example of amorphous silicon

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 1, 2005, Pages 13-24

  Lips, K ^a   Boehme, C ^a   Ehara, T ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

A Si:H; ESR; Photoluminescence; Recombination; Spin

Indexed keywords

AMORPHOUS SILICON; CHARGE CARRIERS; ELECTRON HOLOGRAPHY; ELECTRON TRANSITIONS; EXCITONS; MATHEMATICAL MODELS; MICROWAVES; NATURAL FREQUENCIES; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; PROBABILITY; SEMICONDUCTOR MATERIALS; SPECTROSCOPIC ANALYSIS;

A-SI:H; COMPLEX DEFECT STRUCTURES; RECOMBINATION; SPIN;

ELECTRONIC STRUCTURE;

EID: 15344341629     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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