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Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 190-196

Non-radiative distant pair recombination in amorphous silicon

(3) Stachowitz, Ruben a,b Schubert, Meinolf b Fuhs, Walther a

a HAHN MEITNER INSTITUT (Germany)

b PHILIPPS UNIVERSITY MARBURG (Germany)

Author keywords

Silicon; Spectroscopy; Tunnelling

Indexed keywords

AMORPHOUS SILICON; CHARGE CARRIERS; COMPUTATIONAL METHODS; ELECTRON TRANSITIONS; ELECTRON TUNNELING; MATHEMATICAL MODELS; REACTION KINETICS; SPECTROSCOPIC ANALYSIS;

AUGER RECOMBINATION; EXCITONIC RECOMBINATION MODEL; QUADRATURE FREQUENCY RESOLVED SPECTROSCOPY (QFRS);

SEMICONDUCTING SILICON;

EID: 0032068962 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(98)00043-X Document Type: Article

Times cited : (38)

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