Characterization of carrier-envelope phase-sensitive photocurrent injection in a semiconductor

Journal of the Optical Society of America B: Optical Physics

Volumn 22, Issue 2, 2005, Pages 362-368

  Roos, Peter A ^a   Li, Xiaoqin ^a   Pipis, Jessica A ^a   Fortier, Tara M ^a,c   Cundiff, Steven T ^a,c   Bhat, Ravi D R ^b   Sipe, John E ^b  

^a UNIVERSITY OF COLORADO   (United States)

^b UNIVERSITY OF TORONTO   (Canada)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; LASER BEAM EFFECTS; LOW TEMPERATURE PROPERTIES; OPTICAL RESOLVING POWER; PHOTOCURRENTS; PHOTOSENSITIVITY; QUANTUM INTERFERENCE PHENOMENA; SCANNING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SIGNAL DETECTION; ULTRASHORT PULSES;

CARRIER ENVELOPE PHASE; PHASE SENSITIVE PHOTOCURRENT INJECTION; QUANTUM INTERFERENCE PHOTOCURRENT SIGNAL; TRANSIMPEDANCE AMPLIFICATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 15044343338     PISSN: 07403224     EISSN: None     Source Type: Journal    
DOI: 10.1364/JOSAB.22.000362     Document Type: Article

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