Light-induced gaps in semiconductor band-to-band transitions

Physical Review Letters

Volumn 92, Issue 21, 2004, Pages

  Vu, Q T ^a   Haug, H ^a   Mucke O D ^b   Tritschler, T ^b   Wegener, M ^b   Khitrova, G ^c   Gibbs, H M ^c  

^a GOETHE UNIVERSITY   (Germany)

^b UNIVERSITY OF KARLSRUHE   (Germany)

^c UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; DISLOCATIONS (CRYSTALS); ELECTRIC FIELDS; ENERGY GAP; MATHEMATICAL MODELS; PHOTONS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS;

INTENSE LIGHT FIELDS; LIGHT-INDUCED GAPS; SEMICONDUCTOR BAND-TO-BAND TRANSITIONS;

THIN FILMS;

EID: 3142512686     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.217403     Document Type: Article

References (18)

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