Rectifying properties of oxide semiconductor heterostack films at elevated temperatures

Journal of Sol-Gel Science and Technology

Volumn 33, Issue 3, 2005, Pages 323-326

  Ohya, Yutaka ^a   Niwa, Tsukasa ^a   Ban, Takayuki ^a   Takahashi, Yasutaka ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

Elevated temperature; Multilayered film; Oxide semiconducting film; Rectifying property

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRODES; HEAT TREATMENT; HEATING; MULTILAYERS; NICKEL COMPOUNDS; OXIDES; THERMAL EFFECTS; TITANIUM DIOXIDE;

ELEVATED TEMPERATURE; MULTILAYERED FILMS; OXIDE SEMICONDUCTING FILMS; RECTIFYING PROPERTIES;

SEMICONDUCTING FILMS;

EID: 14844350519     PISSN: 09280707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10971-005-6383-x     Document Type: Article

References (8)

1. H. Sato, T. Minami, S. Takata, and T. Yamada, Thin Solid Films 236, 27 (1993).
2. M. Sugiura, K. Uragou, M. Noda, M. Tachiki, and T. Kobayashi, Jpn. J. Appl. Phys. 38, 2675 (1999).
3. Y. Ohya, M. Ueda, and Y. Takahashi, Jpn. J. Appl. Phys. 35, 4738 (1996).
4. Y. Ohya, H. Koyama, T. Ban, and Y. Takahashi, Mater. Sci. Eng. B54, 55 (1998).
5. A. Kudo, H. Yanagi, Y. Yano, K. Ueda, H. Hosono, and H. Kawazoe, Appl. Phys. Lett. 75, 2851 (1999).
6. Y. Ohya, T. Niwa, T. Ban and Y. Takahashi, Jpn. J. Appl. Phys. 40, 297 (2001).
7. T. Seiyama, A. Kato, K. Fujiishi, and M. Nagatani, Anal. Chem. 34, 1502 (1962).
8. Y. Ohya, M. Kameshima, T. Tanabe, T. Ban, and Y. Takahashi, J. Mater. Synth. Proc. 6, 237 (1998).