High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2004, Pages 143-146

  Toh, Suey Li ^a,b,c   Li, K ^a   Ang, C H ^a   Er, E ^a   Redkar, S ^a   Loh, K P ^b   Boothroyd, C B ^c   Chan, L ^a  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED); DEEP SUB-MICRON SEMICONDUCTOR DEVICES; SHALLOW TRENCH ISOLATION (STI); SPATIAL RESOLUTION;

ANGLE MEASUREMENT; COMPUTER SIMULATION; ELECTRON BEAMS; ELECTRON DIFFRACTION; ENERGY DISSIPATION; LATTICE CONSTANTS; RAMAN SPECTROSCOPY; SILICON COMPOUNDS; SILICON WAFERS; STRAIN; STRESS ANALYSIS; TENSORS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

MOSFET DEVICES;

EID: 14844303512     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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