Metastable He deexcitation at semiconductor interfaces

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 230, Issue 1-4, 2005, Pages 340-350

  Pasquali, L ^a,b   Nannarone, S ^a,b  

^a INFM Natl Ctr NanoStructures B   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

CaF2; Metastable deexcitation spectroscopy; Rare earths; Semiconductor interfaces; Semiconductors

Indexed keywords

ANNEALING; CALCIUM COMPOUNDS; CHEMICAL REACTIONS; COMPOSITION; CRYSTAL STRUCTURE; DEPOSITION; GALLIUM COMPOUNDS; INTERFACES (MATERIALS); MORPHOLOGY; NANOSTRUCTURED MATERIALS; PHASE TRANSITIONS; PHOTOELECTRICITY; PHOTOEMISSION; RARE EARTH COMPOUNDS; SURFACE PHENOMENA;

CAF2; METASTABLE DEEXCITATION SPECTROSCOPY; ORGANIC MOLECULES; SEMICONDUCTOR SURFACES;

SEMICONDUCTOR MATERIALS;

EID: 14844283806     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.12.064     Document Type: Conference Paper

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