Electronic structure of rare earth arsenide/gallium arsenide superlattices

Solid State Communications

Volumn 100, Issue 7, 1996, Pages 477-480

  Said, M ^a,b   Bertoni, C M ^a   Fasolino, A ^a,c   Ossicini, Stefano ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b Inst Preparatoire Etud d'Ingenieur   (Tunisia)

^c RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

A. heterojunctions; A. nanostructures; D. electronic states

Indexed keywords

BAND STRUCTURE; CALCULATIONS; ELECTRONIC DENSITY OF STATES; NANOSTRUCTURED MATERIALS; RARE EARTH COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS; SUPERLATTICES;

RARE EARTH ARSENIDES; SEMIMETALS;

HETEROJUNCTIONS;

EID: 0030289598     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00453-X     Document Type: Article

References (14)

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7. Said, M., Ossicini, S., Bertoni, C.M. and Fasolino, A. To be published.
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14. A picture of the structure is given in [5].