-
1
-
-
0034428624
-
Porous silicon as an effective material for thermal isolation on bulk crystalline silicon
-
Nassiopoulou A.G., Kaltsas G. Porous silicon as an effective material for thermal isolation on bulk crystalline silicon. Phys. Status Solidi A. 182:2000;307
-
(2000)
Phys. Status Solidi A
, vol.182
, pp. 307
-
-
Nassiopoulou, A.G.1
Kaltsas, G.2
-
3
-
-
0032091511
-
Thick oxidized porous silicon layer as a thermo-insulating membrane for high-temperature operating thin- and thick-film gas sensors
-
Maccagnani P., Angelucci R., Pozzi P., Poggi A., Dori L., Cardinali G.C., Negrini P. Thick oxidized porous silicon layer as a thermo-insulating membrane for high-temperature operating thin- and thick-film gas sensors. Sens. Actuators B. 49:1998;22-29
-
(1998)
Sens. Actuators B
, vol.49
, pp. 22-29
-
-
MacCagnani, P.1
Angelucci, R.2
Pozzi, P.3
Poggi, A.4
Dori, L.5
Cardinali, G.C.6
Negrini, P.7
-
4
-
-
0043236460
-
Thermal properties of suspended porous silicon micro-hotplates for thermal sensor applications
-
Tsamis C., Tserepi A., Nassiopoulou A.G. Thermal properties of suspended porous silicon micro-hotplates for thermal sensor applications. Sens. Actuators B. 95:2003;78-82
-
(2003)
Sens. Actuators B
, vol.95
, pp. 78-82
-
-
Tsamis, C.1
Tserepi, A.2
Nassiopoulou, A.G.3
-
5
-
-
0038038916
-
The promising role of porous Si in mixed-signal integrated circuit technology
-
Kim H., Chong K., Xie Y.-H. The promising role of porous Si in mixed-signal integrated circuit technology. Phys. Status Solidi A. 197:(1-2):2003;269-274
-
(2003)
Phys. Status Solidi A
, vol.197
, Issue.1-2
, pp. 269-274
-
-
Kim, H.1
Chong, K.2
Xie, Y.-H.3
-
6
-
-
0032643762
-
Depth dependence of stress and porosity in porous silicon: A micro-Raman study
-
Papadimitriou D., Bitsakis J., López-Villegas J.M., Samitier J., Morante J.R. Depth dependence of stress and porosity in porous silicon: a micro-Raman study. Thin Solid Films. 349:1999;293-297
-
(1999)
Thin Solid Films
, vol.349
, pp. 293-297
-
-
Papadimitriou, D.1
Bitsakis, J.2
López-Villegas, J.M.3
Samitier, J.4
Morante, J.R.5
-
7
-
-
0037933367
-
Fabrication of suspended porous silicon micro-hotplates for thermal sensor applications
-
Tsamis C., Tserepi A., Nassiopoulou A.G. Fabrication of suspended porous silicon micro-hotplates for thermal sensor applications. Phys. Status Solidi A. 192:(2):2003;539-543
-
(2003)
Phys. Status Solidi A
, vol.192
, Issue.2
, pp. 539-543
-
-
Tsamis, C.1
Tserepi, A.2
Nassiopoulou, A.G.3
-
8
-
-
0035904934
-
Lattice mismatch induced-stress porous silicon films
-
Manotas S., Agullo-Rueda F., Moreno J.D., Ben-Hander F., Martinez-Duart M.M. Lattice mismatch induced-stress porous silicon films. Thin Solid Films. 401:2001;306-309
-
(2001)
Thin Solid Films
, vol.401
, pp. 306-309
-
-
Manotas, S.1
Agullo-Rueda, F.2
Moreno, J.D.3
Ben-Hander, F.4
Martinez-Duart, M.M.5
-
9
-
-
0001459162
-
Strain Characterization of Semiconductor structures and superlattices
-
D.J. Lockwood, J.F. Young (Eds.) Plenum Press, New York
-
E. Anastassakis, Strain Characterization of Semiconductor structures and superlattices, in: D.J. Lockwood, J.F. Young (Eds.), Light Scattering in Semiconductor Structures and Superlattices, Plenum Press, New York, 1991, p. 173.
-
(1991)
Light Scattering in Semiconductor Structures and Superlattices
, pp. 173
-
-
Anastassakis, E.1
-
10
-
-
0031707677
-
Micro-Raman characterization of stress distribution within free standing mono- and poly-crystalline silicon membranes
-
Siakavellas M., Anastassakis E., Kaltsas G., Nassiopoulou A.G. Micro-Raman characterization of stress distribution within free standing mono- and poly-crystalline silicon membranes. Microelectron. Eng. 41-42:1998;469-472
-
(1998)
Microelectron. Eng
, vol.41-42
, pp. 469-472
-
-
Siakavellas, M.1
Anastassakis, E.2
Kaltsas, G.3
Nassiopoulou, A.G.4
-
11
-
-
0022733729
-
The effects of microcrystal size and shape on the one phonon Raman-spectra of crystalline semiconductors
-
Campbell I.H., Fauchet P.M. The effects of microcrystal size and shape on the one phonon Raman-spectra of crystalline semiconductors. Solid State Commun. 58:(10):1986;739-741
-
(1986)
Solid State Commun
, vol.58
, Issue.10
, pp. 739-741
-
-
Campbell, I.H.1
Fauchet, P.M.2
-
12
-
-
0021491424
-
Microstructure of porous silicon and its evolution with temperature
-
Herino R., Perio A., Barla K., Bomchil G. Microstructure of porous silicon and its evolution with temperature. Mater. Lett. 2:1984;519-523
-
(1984)
Mater. Lett
, vol.2
, pp. 519-523
-
-
Herino, R.1
Perio, A.2
Barla, K.3
Bomchil, G.4
-
13
-
-
0005857693
-
Positron annihilation investigation of porous silicon heat treated at 1000 °c
-
Dannefaer S., Wiebe C., Kerr D. Positron annihilation investigation of porous silicon heat treated at 1000 °C. J. Appl. Phys. 84:1998;6559-6564
-
(1998)
J. Appl. Phys
, vol.84
, pp. 6559-6564
-
-
Dannefaer, S.1
Wiebe, C.2
Kerr, D.3
-
14
-
-
0004140205
-
Experimental estimates of porous silicon bandgap
-
L. Canham (Ed.) EMIS Datareviews, Series No. 18, INSPEC
-
P.D.J. Calcott, Experimental estimates of porous silicon bandgap, in: L. Canham (Ed.), Properties of Porous Silicon, EMIS Datareviews, Series No. 18, INSPEC, 1997, pp. 203-206.
-
(1997)
Properties of Porous Silicon
, pp. 203-206
-
-
Calcott, P.D.J.1
|