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Volumn 49, Issue 1-2, 1998, Pages 22-29

Thick oxidised porous silicon layer as a thermo-insulating membrane for high-temperature operating thin- and thick-film gas sensors

Author keywords

Dielectric membranes; Gas sensor; Porous silicon; Porous silicon oxidation

Indexed keywords

ANODIC OXIDATION; ENERGY DISPERSIVE SPECTROSCOPY; MORPHOLOGY; POROUS SILICON; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; THERMAL INSULATING MATERIALS; THERMOOXIDATION; THICK FILMS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0032091511     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(97)00337-7     Document Type: Article
Times cited : (25)

References (13)
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  • 5
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  • 9
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    • The formation, morphology, and optical properties of porous silicon structures
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  • 10
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  • 11
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    • The kinetics and mechanism of oxide layer formation from porous silicon formed on p-Si substrates
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  • 12
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    • Stress in oxidized porous silicon layers
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.