Evidence of bandbending flattening in 10 nm polycrystalline SnO2

Sensors and Actuators, B: Chemical

Volumn 103, Issue 1-2, 2004, Pages 50-54

  Malagu C ^a   Carotta, M C ^a   Galliera, S ^a   Guidi, V ^a   Maffeis, T G G ^b   Martinelli, G ^a   Owen, G T ^b   Wilks, S P ^b  

^a UNIVERSITY OF FERRARA   (Italy)

^b SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

Electron microscopy; Polycrystalline semiconductors; Schottky barrier

Indexed keywords

CARBON MONOXIDE; CHEMICAL SENSORS; COMPUTER SIMULATION; ELECTRON MICROSCOPY; FERMI LEVEL; MATHEMATICAL MODELS; MORPHOLOGY; MOS DEVICES; NANOSTRUCTURED MATERIALS; NITROGEN OXIDES; POISSON EQUATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR MATERIALS;

ELECTRON AFFINITY; POLYCRYSTALLINE SEMICONDUCTORS; SCHOTTKY BARRIERS; WORK FUNCTIONS;

TIN COMPOUNDS;

EID: 14744289144     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2004.04.036     Document Type: Conference Paper

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