Spin polarization and band alignments at NiMnSb/GaAs interface

Computational Materials Science

Volumn 33, Issue 1-3, 2005, Pages 263-268

  Debernardi, A ^a,b   Peressi, M ^a,c   Baldereschi, A ^a,c,d  

^a DEMOCRITOS NATIONAL SIMULATION CENTER   (Italy)

^b LABORATORIO MDM   (Italy)

^c UNIVERSITY OF TRIESTE   (Italy)

^d Inst de Theor des Phenomenes Phys   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; ELECTRONIC DENSITY OF STATES; GRADIENT METHODS; HETEROJUNCTIONS; NICKEL COMPOUNDS; POLARIZATION; PROBABILITY DENSITY FUNCTION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE;

DENSITY FUNCTIONAL THEORY (DFT); LOCAL DENSITY APPROXIMATION (LDA); LOCAL DENSITY OF STATES (LDOS); SPIN POLARIZATION;

INTERFACES (MATERIALS);

EID: 14744271235     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2004.12.048     Document Type: Conference Paper

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