Very low chemical disorder in epitaxial NiMnSb films on GaAs(111)B

Applied Physics Letters

Volumn 83, Issue 20, 2003, Pages 4214-4216

  Van Roy, W ^a   Wojcik M ^b   Jedryka E ^b   Nadolski, S ^b   Jalabert, D ^c   Brijs, B ^a   Borghs, G ^a   De Boeck, J ^a  

^a IMEC   (Belgium)

^b INSTITUTE OF PHYSICS   (Poland)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NICKEL COMPOUNDS; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; SINGLE CRYSTALS; STOICHIOMETRY; SUBSTITUTION REACTIONS;

CHEMICAL DISORDER; HALF METALLIC BAND STRUCTURE; INTERFACE ORIENTATION; NICKEL MANGANESE ANTIMONY FILM; SPIN INJECTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0348233805     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1627938     Document Type: Article

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