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Volumn 251, Issue 1-4, 2003, Pages 323-326
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Growth of the half-Heusler alloy NiMnSb on (In,Ga)As/InP by molecular beam epitaxy
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Author keywords
A1. X ray diffraction; A3. Molecular beam epitxay; B1. Heusler alloys; B2. Half metals; B2. Magnetic materials; B2. Semiconducting III V materials
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Indexed keywords
FILM GROWTH;
MAGNETIC PROPERTIES;
MOLECULAR BEAM EPITAXY;
QUANTUM INTERFERENCE DEVICES;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTING INDIUM PHOSPHIDE;
SUPERCONDUCTING DEVICES;
THIN FILMS;
X RAY DIFFRACTION;
HALF-HEUSLER ALLOYS;
NICKEL ALLOYS;
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EID: 0037381882
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(02)02151-6 Document Type: Conference Paper |
Times cited : (17)
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References (7)
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