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Volumn 251, Issue 1-4, 2003, Pages 323-326

Growth of the half-Heusler alloy NiMnSb on (In,Ga)As/InP by molecular beam epitaxy

Author keywords

A1. X ray diffraction; A3. Molecular beam epitxay; B1. Heusler alloys; B2. Half metals; B2. Magnetic materials; B2. Semiconducting III V materials

Indexed keywords

FILM GROWTH; MAGNETIC PROPERTIES; MOLECULAR BEAM EPITAXY; QUANTUM INTERFERENCE DEVICES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM PHOSPHIDE; SUPERCONDUCTING DEVICES; THIN FILMS; X RAY DIFFRACTION;

EID: 0037381882     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02151-6     Document Type: Conference Paper
Times cited : (17)

References (7)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.