Investigation of carrier transport in GaN single crystals and radiation detectors by thermally stimulated methods

Acta Physica Polonica A

Volumn 107, Issue 2, 2005, Pages 340-345

  Kazukauskas V ^a   Kalendra, V ^a   Vaitkus, J V ^a  

^a VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ENERGY GAP; IMPURITIES; IONIZATION; OPTOELECTRONIC DEVICES; PERCOLATION (SOLID STATE); PHONONS; RADIATION DETECTORS; SCATTERING; SINGLE CRYSTALS; THERMAL EFFECTS; X RAYS;

IONIZED IMPURITIES; THERMALLY STIMULATED CURRENTS; THERMALLY STIMULATED DEPOLARIZATION METHODS; TRAP LEVELS;

GALLIUM NITRIDE;

EID: 14644435149     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.107.340     Document Type: Conference Paper

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