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Volumn 84, Issue 4, 1998, Pages 2053-2061

Influence of defect inhomogeneities on the Hall mobility and concentration in undoped GaAs

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[No Author keywords available]

Indexed keywords


EID: 0004693601     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368265     Document Type: Article
Times cited : (19)

References (42)
  • 10
    • 0003693189 scopus 로고
    • edited by H. Ehrenreich and D. Turnbull Academic, New York
    • D. J. Bergman and D. Stroud, in Solid Slate Physics, edited by H. Ehrenreich and D. Turnbull (Academic, New York, 1992), Vol. 46.
    • (1992) Solid Slate Physics , vol.46
    • Bergman, D.J.1    Stroud, D.2
  • 22
    • 0002531092 scopus 로고
    • edited by R. K. Willardson and A. C. Beer Academic, New York
    • D. L. Rode, in Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1975), Vol. 10, p. 1.
    • (1975) Semiconductors and Semimetals , vol.10 , pp. 1
    • Rode, D.L.1
  • 35
    • 3142627884 scopus 로고
    • R. H. Bube, H. E. Mac Donald, and J. Blanc, J. Phys. Chem. Solids 22, 173 (1961); R. H. Bube, H. E. Mac Donald, Phys. Rev. 121, 473 (1961).
    • (1961) Phys. Rev. , vol.121 , pp. 473
    • Bube, R.H.1    Mac Donald, H.E.2
  • 38
    • 0004278609 scopus 로고
    • Cambridge University Press, Cambridge
    • R. A. Smith, Semiconductors (Cambridge University Press, Cambridge, 1978).
    • (1978) Semiconductors
    • Smith, R.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.