A high performance 180nm nonvolatile memory cell using phase change Sn-doped Ge2Sb2Te5 chalcogenide

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn 2003-January, Issue , 2003, Pages 32-35

  Chen, Y C ^a   Chen, H P ^a   Liao, Y Y ^a   Lin, H T ^b   Chou, L H ^b   Kuo, J S ^c   Chen, P H ^c   Lung, S L ^a   Liu, Rich ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHALCOGENIDES; CRYSTALLINE MATERIALS; ENERGY UTILIZATION; GERMANIUM; NONVOLATILE STORAGE; SEMICONDUCTING TELLURIUM; TESTING; TIN;

CRYSTALLINE STATE; ELECTRICAL TESTING; HIGH SCALABILITIES; LOW ENERGY CONSUMPTION; NON-VOLATILE MEMORY; NONVOLATILE MEMORY CELLS; PROGRAMMING SPEED; PROGRAMMING VOLTAGE;

PHASE CHANGE MEMORY;

EID: 84944679343     PISSN: 19308868     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2003.1252544     Document Type: Conference Paper

References (4)

1. S. Tyson, G. Wiener, T. Lowrey, S. Hudgens, K. Hunt, Nonvolatile, high density, high performance phase-change memory, Aero Space Conference Proc., Vol. 5, 2000, pp. 385-390.
2. N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, Rapid-phase transitions of GeTe-Sb2Te3 pseudo-binary amorphous thin films for an optical disk memory, J. Appl. Phys. Vol. 69, no. 5, 1991, pp. 2849-2857.
3. R. Kojima and N. Yamada, Ge-Sn-Sb-Te phase-change recording material having high crystallization speed, Proc. of PCOS2000, 2000, pp. 36-41.
4. S. Lai, and T. Lowrey, OUM - a 180 nm nonvolatile memory cell element technology for stand alone and embedded applications, IEDM Technical Digest 2001, 2001, pp. 803-806.