Relaxation of photoexited charge carrier concentration and mobility in μc-Si:H

Thin Solid Films

Volumn 451-452, Issue , 2004, Pages 290-293

  Juska G ^a   Nekrasas N ^a   Genevicius K ^a   Stuchlik, J ^b   Kocka J ^b  

^a VILNIUS UNIVERSITY   (Lithuania)

^b INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

Debye radius; Microcrystalline silicon; Mobility; Solar cells

Indexed keywords

ABSORPTION; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; HYDROGENATION; LOW TEMPERATURE EFFECTS; MATHEMATICAL MODELS; RELAXATION PROCESSES; SOLAR CELLS;

DEBYE RADIUS; MICROCRYSTALLINE SILICON;

SILANES;

EID: 1442360280     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.053     Document Type: Conference Paper

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