High sensitivity photochemical sensors based on amorphous silicon

Materials Research Society Symposium - Proceedings

Volumn 467, Issue , 1997, Pages 949-954

  Fortunato, E ^a   Malik, A ^a   Seco, A ^a   Macarico, A ^a   Martins, R ^a  

^a UNINOVA   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; HYDROGEN; INTERFACES (MATERIALS); MIS DEVICES; OXIDATION; PLASMAS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

CRYSTALLINE SILICON; PHOTOCHEMICAL SENSOR; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AMORPHOUS FILMS;

EID: 0031334288     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-467-949     Document Type: Conference Paper

References (7)