Mode Characteristics of Semiconductor Equilateral Triangle Microcavities With Side Length of 5-20 μm

IEEE Photonics Technology Letters

Volumn 16, Issue 2, 2004, Pages 359-361

  Lu, Qiao Yin ^a   Chen, Xiao Hong ^a   Guo, Wei Hua ^a   Yu, Li Juan ^a   Huang, Yong Zhen ^a   Wang, Jian ^b   Luo, Yi ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

GaInAsP InP; Microresonator; Photoluminescence (PL); Quantum wells

Indexed keywords

ETCHING; INDUCTIVELY COUPLED PLASMA; PHASE SHIFT; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

EQUILATERAL TRIANGLE MICRORESONATORS (ETR); GAINASP-INP;

SEMICONDUCTOR DEVICES;

EID: 1442264095     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.821063     Document Type: Article

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