Analysis of semiconductor microlasers with an equilateral triangle resonator by rate equations

IEEE Journal of Quantum Electronics

Volumn 37, Issue 10, 2001, Pages 1259-1264

  Huang, Yong Zhen ^a,b   Guo, Wei Hua ^a   Yu, Li Juan ^a   Lei, Hong Bin ^a  

^a IEEE   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Finite difference time domain technique; Microlasers; Rate equations; Semiconductor laser; Single mode operation

Indexed keywords

EQUILATERAL TRIANGLE RESONATOR; FINITE-DIFFERENCE TIME-DOMAIN TECHNIQUE; GAIN SPECTRUM; PADE APPROXIMATION; RATE EQUATION; SEMICONDUCTOR MICROLASER; SPONTANEOUS EMISSION SPECTRUM; THRESHOLD CURRENT;

APPROXIMATION THEORY; ELECTRIC CURRENTS; ENERGY GAP; FINITE DIFFERENCE METHOD; LASER MODES; LIGHT EMISSION; MATHEMATICAL MODELS; REFRACTIVE INDEX; RESONATORS; SEMICONDUCTING INDIUM COMPOUNDS; TIME DOMAIN ANALYSIS;

QUANTUM WELL LASERS;

EID: 0035472629     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.952537     Document Type: Article

References (6)

1. Resonant frequencies and quality factors for optical equilateral triangle resonators calculated by FDTD technique and the Padé approximation
2. Analysis and numerical simulation of eigenmode characteristics for semiconductor lasers with an equilateral triangle micro-resonator
3. Influence of output waveguide on mode quality factor in semiconductor microlasers with an equilateral triangle resonator
4. Computation of resonant frequencies and quality factors of cavities by FDTD technique and Padé approximation
5. yAs long-wavelength strained quantum-well lasers
6. Calculated spontaneous emission factor for double-heterostructure injection lasers with gain-induced waveguiding