Al/Si ohmic contacts to p-type 4H-SiC for power devices

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Kassamakova, Liliana ^a,b   Kakanakov, Roumen ^a   Kassamakov, Ivan ^a   Nordell, Nils ^c   Savage, Susan ^c   Svedberg, Erik B ^b   Madsen, Lynnette D ^b  

^a Central Laboratory of Applied Physics Bulgarian Academy of Sciences   (Bulgaria)

^b LINKÖPING UNIVERSITY   (Sweden)

^c ACREO AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; ALUMINUM; ANNEALING; ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; ELECTRIC CONDUCTIVITY OF SOLIDS; MORPHOLOGY; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMIONIC EMISSION;

CONTACT RESISTIVITY;

OHMIC CONTACTS;

EID: 18844470023     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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