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Volumn 2, Issue , 2004, Pages 671-672

Optoelectronic devices for terahertz amplification and oscillation

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; ELECTRON BEAMS; ELECTRON GAS; ELECTRON SCATTERING; OSCILLATIONS; OSCILLATORS (ELECTRONIC); PERMITTIVITY; PHOTONS; QUANTUM THEORY; SLOT ANTENNAS; TRANSCONDUCTANCE;

EID: 14344259780     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (1)

References (6)
  • 4
    • 0030168919 scopus 로고    scopus 로고
    • A possible three-terminal amplifier device in the terahertz frequency range using photon-assisted tunneling
    • M. Asada, "A possible three-terminal amplifier device in the terahertz frequency range using photon-assisted tunneling," Japan. J. Appl. Phys. vol. 35, pp.L685-L687, 1996.
    • (1996) Japan. J. Appl. Phys. , vol.35
    • Asada, M.1
  • 5
    • 23744513420 scopus 로고    scopus 로고
    • Proposal of a semiconductor klystron device for THz range using two-dimensional electron gas
    • Kagoshima, Japan, WP-35 (May)
    • M. Asada, H. Imai, and H. Kamata, "Proposal of a Semiconductor Klystron Device for THz Range Using Two-Dimensional Electron Gas," Int. Conf. Indium Phosphide and Related Materials, Kagoshima, Japan, WP-35 (May 2004), M. Asada, to be published in Japan. J. Appl. Phys., 2004.
    • (2004) Int. Conf. Indium Phosphide and Related Materials
    • Asada, M.1    Imai, H.2    Kamata, H.3
  • 6
    • 23744513420 scopus 로고    scopus 로고
    • to be published
    • M. Asada, H. Imai, and H. Kamata, "Proposal of a Semiconductor Klystron Device for THz Range Using Two-Dimensional Electron Gas," Int. Conf. Indium Phosphide and Related Materials, Kagoshima, Japan, WP-35 (May 2004), M. Asada, to be published in Japan. J. Appl. Phys., 2004.
    • (2004) Japan. J. Appl. Phys.
    • Asada, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.