Proposal of a semiconductor klystron device for THz range using two-dimensional electron gas

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 439-442

  Asada, M ^a,b   Imai, H ^a   Kamata, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON GAS; ELECTRON WAVE TUBES; OSCILLATORS (ELECTRONIC); SEMICONDUCTOR DEVICE MANUFACTURE; SLOT ANTENNAS; TRANSCONDUCTANCE;

AMPLIFIER DEVICES; CHARGE DENSITY MODULATION; DEVICE INTEGRATION; OUTPUT POWER;

KLYSTRONS;

EID: 23744513420     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. E. R. Brown, J. R. Sönderström, C. D. Parker, L. J. Mahoney, K. M. Molvar, and T. C. McGill, Appl. Phys. Lett. 58 (1991) 2291.
2. M. Reddy, S. C. Martin, R. E. Muller, R. P. Smith, P. H. Siegel, M. J. Mondry, M. J. W. Rodwell, H. Kroemer, and S. J. Allen, Jr., IEEE Electron Dev. Lett. 18 (1997) 218.
3. R. Köhler, A. Tredicucci, F. Beltram, H. E. Beere, E. H. Linfield, A. G. Davies, D. A. Ritchie, R. C. Iotti, and F. Rossi, Nature 419 (2002) 156.
4. M. Asada, Jpn. J. Appl. Phys. 35 (1996) L685.
5. M. Asada, J. Appl. Phys. 94 (2003) 677.
6. M. Asada, Phys. Rev. B 67 (2003) 1153031.
7. J. W. Gewartoski and H. A. Watson, Principles of Electron Tubes, Van Nostrand, Princeton, 1965.
8. P. N. Butcher and W. Fawcett, Proc. Phys. Soc. 86 (1965) 1205.
9. M. Asada, IEEE J. Quantum Electron. 25 (1989) 2019.
10. B. Hu and S. D. Sarma, Semicond. Sci. Technol. 7 (1992) B305.
11. T. Suemitsu, T. Ishii, H. Yokoyama, Y. Umeda, T. Enoki, Y. Ishii, and T. Tamamura, Int. Electron Devices Meeting, (1998) 22