Possible three-terminal amplifier device in the terahertz frequency range using photon-assisted tunnelling

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 6 A, 1996, Pages

  Asada, M ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; ELECTROMAGNETIC WAVES; ELECTRON DEVICES; FREQUENCY RESPONSE; PHOTONS; TUNNEL DIODE AMPLIFIERS;

NANOMETER-THICK MULTILAYER STRUCTURE; PHOTON-ASSISTED TUNNELING; RESONANT TUNNELING; TERAHERTZ FREQUENCY AMPLIFICATION;

AMPLIFIERS (ELECTRONIC);

EID: 0030168919     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l685     Document Type: Article

References (16)