35 GHz pure passively mode locked quantum dot lasers operating close to 1.3μm

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 2004, Pages 617-618

  Tan, W K ^a   Bryce, A C ^a   Marsh, J H ^b   Maximov, M V ^c   Ustinov, V M ^c  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b IntensePhtonics Ltd   (United Kingdom)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; LASER MODE LOCKING; NATURAL FREQUENCIES; OPTIMIZATION; PHOTOLITHOGRAPHY; PULSE MODULATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

LASER STRUCTURES; MICROWAVE SPECTRUMS; QUANTUM LASER DOTS; WAVELENGTH CHRIPS;

QUANTUM WELL LASERS;

EID: 14344257508     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Arakawa, Y. et al., "Multidimensional quantum well laser and temperature-dependence of its threshold current", Applied Physics Letters, Vol 40, 1982, pg. 939-941
2. Eliseev P.G., et al., "Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum dot lasers", IEEE Journal of Selected Topics of Quantum Electronics, Vol 7, 2001, pg. 135-142
3. H. Saito et al., "Low chirp observed in directly modulated quantum dot lasers", IEEE Photonics Technology Letters, Vol 12, 2000, pg. 1298-1300
4. Klopf K. et al., "High-temperature operating 1.3-μm quantum-dot lasers for telecommunication applications", IEEE Photonics Technology Letters, Vol 13, 2001, pg. 764-766
5. K.T.Tan et al., "Investigation of high repetition rate mode-locked quantum dot lasers", IEEE LEOS Annual Meeting Conference October 2003
6. M.G. Thompson et al., "Transform-limited optical pulses from 18GHz monolithic modelocked quantum dot lasers operating at ∼1.3μm" IEE Electronics Letters, Vol 40, 2004, pg. 346-347
7. A.R. Kovsh et al., "InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency", Electronics Letters, Vol 38, 2002, pg. 1104-1106
8. M. V. Maximov et al., "Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs Stressors", Phys. Rev. B, Vol 62, 2000, pg. 16671-16680