Electrical properties of SiGe microstructures fabricated by C.V.D. and F.I.B. and their applications in detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 485, Issue 1-2, 2002, Pages 166-171

  Ganetsos, T ^a,b  

^a Greek Air Force Academy Pylou 22 N Kifisia 14564   (Greece)

^b UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; ELECTRIC RESISTANCE; HALL EFFECT; HETEROJUNCTIONS; INFRARED DETECTORS; ION BEAMS; ION SOURCES; STRAIN;

FOCUSED ION BEAMS (FIB);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 14244271761     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(02)00549-1     Document Type: Conference Paper

References (10)