Strained SiGe-alloy layers formed by solid phase epitaxial growth of Ge+ ion implanted silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 122, Issue 4, 1997, Pages 630-634

  Songsiriritthigul, P ^a   Holmen G ^a   Olsson, E ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Critical ion dose; Ion implantation; SiGe alloy; Solid phase epitaxial growth; Strain relaxation; Strained layer

Indexed keywords

ANNEALING; CRYSTALS; EPITAXIAL GROWTH; GERMANIUM; GERMANIUM ALLOYS; ION IMPLANTATION; IONS; SILICON ALLOYS; STRAIN;

ION DOSES;

SILICON;

EID: 0031098749     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00824-5     Document Type: Article

References (21)

1. A. Schüppen, A. Grühle, H. Kibbel, U. Erben and U. König, Electron. Lett. 30 (1994) 1187.
2. J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory and R. T. Lynch, Appl. Phys. Lett. 44 (1984) 102.
3. B. S. Meyerson, K. J. Uram and F. K. LeGoues, Appl. Phys. Lett. 53 (1988) 2555.
4. V. Venkataraman, P.V. Schwartz and J.C. Sturm, Appl. Phys. Lett. 59 (1991) 2871.
5. K. Nakai, Y. Gotoh and M. Ozeki, Appl. Surf. Sci. 60/61 (1992) 602.
6. G. Mezer, S.M. Matteson and J. Gyulai, Nucl. Instr. and Meth. 182/183 (1981) 587.
7. M. Berti, G. Mazzi, L. Calcagnile, A.V. Drigo, P.G. Merli and A. Migliori, J. Mater. Res. 6 (1991) 2120.
8. D.C. Paine, D.J. Howard, N.G. Stoffel and J.A. Horten, J. Mater. Res. 5 (1990) 1023.
9. D.C. Paine, D.J. Howard and N.G. Stoffel, J. Electron. Mater. 20 (1991) 735.
10. F. Corni, S. Frabboni, G. Ottaviani, G. Queirolo, D. Bisero, C. Bresolin, R. Fabbri and M. Servidori, J. Appl. Phys. 71 (1992) 2644.
11. S. Lombarde, F. Priolo, S.U. Campisano and S. Lagomarsino, Appl. Phys. Lett. 62 (1993) 2335.
12. R.G. Elliman and W.C. Wong, Nucl. Instr. and Meth. B 80/81 (1993) 768.
13. R.G. Elliman and W.C. Wong, Nucl. Instr. and Meth. B 85 (1994) 178.
14. P. Songsiriritthigul and G. Holmén, Nucl. Instr. and Meth. B 120 (1996) 207.
15. A. Fukami, K. Shoji, T. Nagano, T. Tokuyama and C. Y. Yang, Microelectron. Eng. 15 (1991) 15.
16. S. Lombardo, V. Raineri, R. Portoghese, S.U. Campisano, A. Pinto, G. La Rosa and P. Ward, Nucl. Instr. and Meth. B 120 (1996) 169.
17. G. Mezer, S. M. Matteson and J. Gyulai, Nucl. Instr. and Meth. 182/183 (1981) 587.
18. L.B. Freund, J. Appl. Mech. 54 (1987) 553.
19. W. Kern and D.A. Puotinen, RCA Rev. 31 (1970) 187.
20. J.F. Ziegler, J. P. Biersack and U. Littmark, The Stopping and Range of Ions in Solids, Vol. I (Pergamon Press, Oxford 1985).
21. P. Songsiriritthigul and G. Holmén, Nucl. Instr. and Meth. B 115 (1996) 355.