Study on photoluminescence of interface layer of ZnTe/CdTe heterostructure

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 225-228

  Kim, Y H ^a   Kim, I J ^a   Lee, S D ^a   Oh, K N ^a   Hong, S K ^a   Kim, S U ^a   Park, M J ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; DEPOSITION; ETCHING; INTERFACES (MATERIALS); LIGHT EMISSION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POLYCRYSTALS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING ZINC COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

DONOR ACCEPTOR PAIR; ELECTRON BEAM EVAPORATION; ZINC TELLURIDE;

HETEROJUNCTIONS;

EID: 0033686938     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00090-7     Document Type: Article

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