Chemical vapor growth of NiGa2O4 films: Advantages and limitations of a single molecular source

Chemical Vapor Deposition

Volumn 11, Issue 1, 2005, Pages 11-16

  Mathur, Sanjay ^a   Barth, Sven ^a   Shen, Hao ^a  

^a INM LEIBNIZ INSTITUTE FOR NEW MATERIALS   (Germany)

Author keywords

Chemical vapor growth (CVG); NiGa2O4; Single source precursor; Spinel

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION; CRYSTAL MICROSTRUCTURE; DIFFERENTIAL THERMAL ANALYSIS; ENERGY DISPERSIVE SPECTROSCOPY; FILM GROWTH; METALLIC FILMS; NICKEL COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SILICON; STOICHIOMETRY; SUBSTRATES; THERMOGRAVIMETRIC ANALYSIS; X RAY DIFFRACTION ANALYSIS;

MORPHOLOGICAL INHOMOGENEITY; NIGA2O4; SIMPLE-SOURCE PRECURSORS; SPINEL;

NANOSTRUCTURED MATERIALS;

EID: 13844254563     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.200306314     Document Type: Article

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