Midinfrared luminescence imaging and its application to the optimization of light-emitting diodes

Applied Physics Letters

Volumn 86, Issue 4, 2005, Pages

  Weik, F ^a   Tomm, J W ^a   Glatthaar, R ^b   Vetter, U ^b   Szewczy, D ^b   Nurnus, J ^b   Lambrecht, A ^b   Mechold, L ^c   Spellenberg, B ^d   Bassler, M ^d   Behringer, M ^e   Luft, J ^e  

^a MAX BORN INSTITUT   (Germany)

^b FRAUNHOFER INSTITUTE FOR PHYSICAL MEASUREMENT TECHNIQUES IPM   (Germany)

^c Laser Components GmbH   (Germany)

^d Thermosensorik GmbH   (Germany)

^e OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FILM GROWTH; GAS DETECTORS; LATTICE CONSTANTS; LEAD COMPOUNDS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; NEODYMIUM LASERS; OPTICAL PUMPING; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY; SURFACE STRUCTURE;

MIDINFRARED LUMINESCENCE IMAGING SPECTROSCOPY; MUTLIQUANTUM WELLS; NEAR INFRARED (NIR);

INFRARED IMAGING;

EID: 13644273778     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1855420     Document Type: Article

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