Halogen chemisorption, the pairwise diffusion of I, and trapping by defects on Si(1 0 0)

Surface Science

Volumn 577, Issue 1, 2005, Pages 77-85

  Xu, G J ^a   Signor, A W ^a   Agrawal, Abhishek ^a   Nakayama, Koji S ^a   Trenhaile, B R ^a   Weaver, J H ^a  

^a United States of America   (United States)

Author keywords

Defects; Halogens; Scanning tunneling microscopy; Si(1 0 0); Thermal diffusion

Indexed keywords

CHEMISORPTION; DEFECTS; DISSOCIATION; ELECTRON TRAPS; SCANNING TUNNELING MICROSCOPY; SILICON; TEMPERATURE MEASUREMENT; THERMAL DIFFUSION;

ADATOMS; HALOGENS; SI(100); SINGLE ATOMS;

HALOGEN COMPOUNDS;

EID: 13644268926     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.12.026     Document Type: Article

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