Hydrogenation effect on the Er luminescence in amorphous silicon quantum dot films

Electrochemical and Solid-State Letters

Volumn 8, Issue 2, 2005, Pages

  Park, Nae Man ^a   Kim, Tae Youb ^a   Kim, Kyung Hyun ^a   Sung, Gun Yong ^a   Cho, Kwan Sik ^b   Shin, Jung H ^b   Kim, Baek Hyun ^c   Park, Seong Ju ^c   Lee, Jung Kun ^d   Nastasi, Michael ^d  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

^d LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; DIFFUSION; HYDROGENATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; THIN FILMS;

ION MASS SPECTROMETRY; MIGRATION; NANOCRYSTALS; NON RADIATIVE PROCESS;

SILICON;

EID: 13544260583     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1850399     Document Type: Article

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