High-quality two-dimensional electron gas at large scale GaN/AlGaN wafer interface prepared by mass production MOCVD systems

Solid State Communications

Volumn 133, Issue 10, 2005, Pages 647-649

  Yamada, Syoji ^a   Ohnishi, Takashi ^a   Kakegawa, Tomoyasu ^a   Akabori, Masashi ^a   Suzuki, Toshi Kazu ^a   Sugiura, Hiroshi ^b   Nakamura, Fumihiko ^b   Yamaguchi, Eiichi ^b   Kawai, Hiroji ^b  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b POWDEC K K   (Japan)

Author keywords

A. GaN AlGaN; D. Magnetoresistance; D. Two dimensional electron gas; E. Hall measurements; E. MOCVD

Indexed keywords

ALUMINUM COMPOUNDS; CARRIER CONCENTRATION; GALLIUM NITRIDE; HALL EFFECT; HIGH ELECTRON MOBILITY TRANSISTORS; ION IMPLANTATION; MAGNETORESISTANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLITHOGRAPHY;

CAPACITANCE-VOLTAGE MEASUREMENTS; HALL MEASUREMENTS; TWO-DIMENSIONAL ELECTRON GAS;

ELECTRON GAS;

EID: 13544258641     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2005.01.003     Document Type: Article

References (4)

1. H. Kawai Proceedings of US-Japan Conference on Wide Bandgap Semiconductor Technology for Next Generation Electronic and Photonic Devices, Washington, DC 1998 p. 85
2. S. Arulkumaran Appl. Phys. Lett. 80 2002 2186
3. Z.W. Zheng Phys. Rev. B 62 2000 R7739
4. K. Tsubaki Physica E 13 2002 1111