Characterization of a capacitively coupled RF plasma for SiO2 deposition: Numerical and experimental results

Thin Solid Films

Volumn 475, Issue 1-2 SPEC. ISS., 2005, Pages 118-123

  Goujon, M ^a,b   Belmonte, T ^a   Henrion, G ^b  

^a CNRS   (France)

^b INSTITUT JEAN LAMOUR   (France)

Author keywords

Langmuir probes; Oxygen plasma; Plasma modeling; Radiofrequency

Indexed keywords

CARRIER CONCENTRATION; ELECTRODES; ELECTRON BEAMS; ELECTRON ENERGY LEVELS; GLOW DISCHARGES; IONIZATION; LANGMUIR BLODGETT FILMS; NUMERICAL METHODS; PLASMAS; POISSON EQUATION; PROBES;

LANGMUIR PROBES; OXYGEN PLASMA; PLASMA MODELING; RADIOFREQUENCY;

SILICA;

EID: 13444309542     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.07.027     Document Type: Conference Paper

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