SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 242, Issue 3-4, 2005, Pages 276-280

Synchrotron radiation stimulated etching SiO 2 thin films with a contact cobalt mask

(2) Wang, Changshun a Urisu, Tsuneo b

a SHANGHAI JIAO TONG UNIVERSITY (China)

b INSTITUTE FOR MOLECULAR SCIENCE (Japan)

Author keywords

Cobalt masks; SiO 2 thin films; Synchrotron radiation stimulated etching

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; COBALT; ETCHING; INTERFACES (MATERIALS); PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; SYNCHROTRON RADIATION; THIN FILMS;

COBALT MASKS; REACTION GASES; SIO2 THIN FILMS; SYNCHROTRON RADIATION STIMULATED ETCHING;

SILICA;

EID: 13444302635 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2004.08.021 Document Type: Article

Times cited : (4)

References (16)

1
- 0032079047
- Z. Miqin, T. Desai, and M. Ferrari Biomaterials 19 1998 953
- (1998) Biomaterials , vol.19 , pp. 953
- Miqin, Z.¹ Desai, T.² Ferrari, M.³

2
- 0027286636
- S. Clark, P. Britland, and Connolly J. Cell Sci. 105 1993 203
- (1993) J. Cell Sci. , vol.105 , pp. 203
- Clark, S.¹ Britland, P.² Connolly³

3
- 0024259975
- D. Kleinfeld, K. Kahler, and P. Hockberger J. Neurosci. 8 1988 4098
- (1988) J. Neurosci. , vol.8 , pp. 4098
- Kleinfeld, D.¹ Kahler, K.² Hockberger, P.³

4
- 0001526465
- T. Urisu, and H. Kyuragi J. Vac. Sci. Technol. B 5 1987 1436
- (1987) J. Vac. Sci. Technol. B , vol.5 , pp. 1436
- Urisu, T.¹ Kyuragi, H.²

5
- 0032221806
- S. Hirano, A. Yoshigoe, M. Nagasono, K. Mase, J. Ohara, Y. Nonogaki, Y. Takeda, and T. Urisu J. Synchrotron Rad. 5 1998 1363
- (1998) J. Synchrotron Rad. , vol.5 , pp. 1363
- Hirano, S.¹ Yoshigoe, A.² Nagasono, M.³ Mase, K.⁴ Ohara, J.⁵ Nonogaki, Y.⁶ Takeda, Y.⁷ Urisu, T.⁸

6
- 0000313546
- T. Urisu, H. Kyuragi, Y. Utsumi, J. Takahashi, and M. Kitamura Rev. Sci. Instrum. 60 1989 2157
- (1989) Rev. Sci. Instrum. , vol.60 , pp. 2157
- Urisu, T.¹ Kyuragi, H.² Utsumi, Y.³ Takahashi, J.⁴ Kitamura, M.⁵

7
- 0001201209
- H. Akazawa, J. Takahashi, Y. Utsumi, I. Kawashima, and T. Urisu J. Vac. Sci. Technol. A 9 1991 2653
- (1991) J. Vac. Sci. Technol. A , vol.9 , pp. 2653
- Akazawa, H.¹ Takahashi, J.² Utsumi, Y.³ Kawashima, I.⁴ Urisu, T.⁵

8
- 0001076414
- H. Akazawa Phys. Rev. B 52 1995 12386
- (1995) Phys. Rev. B , vol.52 , pp. 12386
- Akazawa, H.¹

9
- 0038543775
- M. Nakazawa, and H. Sekiyama Appl. Phys. Lett. 56 1990 2108
- (1990) Appl. Phys. Lett. , vol.56 , pp. 2108
- Nakazawa, M.¹ Sekiyama, H.²

10
- 0007039232
- J. Takahashi, Y. Utsumi, and T. Urisu J. Appl. Phys. 70 1991 2958
- (1991) J. Appl. Phys. , vol.70 , pp. 2958
- Takahashi, J.¹ Utsumi, Y.² Urisu, T.³

11
- 0343572244
- B.L. Henke, P. Lee, T.J. Tanaka, R.L. Shimabukuro, and B.K. Fujikawa Atom. Data Nucl. Data Tables 27 1982 1
- (1982) Atom. Data Nucl. Data Tables , vol.27 , pp. 1
- Henke, B.L.¹ Lee, P.² Tanaka, T.J.³ Shimabukuro, R.L.⁴ Fujikawa, B.K.⁵

12
- 0001201209
- H. Akazawa, J. Takahashi, Y. Utsumi, I. Kawashima, and T. Urisu J. Vac. Sci. Technol. A 9 1991 2653
- (1991) J. Vac. Sci. Technol. A , vol.9 , pp. 2653
- Akazawa, H.¹ Takahashi, J.² Utsumi, Y.³ Kawashima, I.⁴ Urisu, T.⁵

13
- 0028760970
- O. Kitamura, T. Goto, S. Terakado, S. Suzuki, T. Sekitani, and K. Tanaka Appl. Surf. Sci. 79/80 1994 122
- (1994) Appl. Surf. Sci. , vol.79-80 , pp. 122
- Kitamura, O.¹ Goto, T.² Terakado, S.³ Suzuki, S.⁴ Sekitani, T.⁵ Tanaka, K.⁶

14
- 36549104579
- K. Ninomiya, K. Suzuki, S. Nisimatsu, and O. Okada J. Appl. Phys. 62 1987 1459
- (1987) J. Appl. Phys. , vol.62 , pp. 1459
- Ninomiya, K.¹ Suzuki, K.² Nisimatsu, S.³ Okada, O.⁴

15
- 0036614392
- S. Moré, H. Graaf, M. Baune, C. Wang, and T. Urisu Jpn. J. Appl. Phys. 41 2002 4390
- (2002) Jpn. J. Appl. Phys. , vol.41 , pp. 4390
- Moré, S.¹ Graaf, H.² Baune, M.³ Wang, C.⁴ Urisu, T.⁵

16
- 0042362200
- C. Wang, and T. Urisu Jpn. J. Appl. Phys. 42 2003 4016
- (2003) Jpn. J. Appl. Phys. , vol.42 , pp. 4016
- Wang, C.¹ Urisu, T.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.