FIB/HVEM observation of the configuration of cracks and the defect structure near the cracks in Si

Journal of Electron Microscopy

Volumn 46, Issue 1, 1997, Pages 45-57

  Saka, H ^a   Abe, S ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

focused ion bean; high voltage electron microscopy; silicon cracks

Indexed keywords

PHASEOLUS (ANGIOSPERM);

CRACK TIPS; DISLOCATIONS (CRYSTALS); HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SILICON WAFERS; SINGLE CRYSTALS;

1000 KV; BULK SINGLE CRYSTALS; CLASSIFIEDS; DEFECTS STRUCTURE; FOCUSED ION BEAM TECHNIQUE; FOCUSED ION BEAM/HIGH-VOLTAGE ELECTRON MICROSCOPY; FOCUSED IONS BEAMS; HIGH VOLTAGE ELECTRON MICROSCOPY; SILICON CRACK.; VICKERS INDENTATION;

FOCUSED ION BEAMS;

EID: 0030893293     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023489     Document Type: Article

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