The influence of temperature, fluence, dose rate, and helium production on defect accumulation and swelling in silicon carbide

Institution of Chemical Engineers Symposium Series

Volumn , Issue 148, 2000, Pages 775-785

  Kishimoto, Hirotatsu ^a   Katoh, Yutai ^a   Kohyama, Akira ^a   Ando, Masami ^a  

^a NONE

Author keywords

Dual beam irradiation method; Ion irradiation; Silicon carbide; Swelling

Indexed keywords

AMORPHIZATION; CHEMICAL VAPOR DEPOSITION; HELIUM; ION BOMBARDMENT; IRRADIATION; POLYCRYSTALLINE MATERIALS; SWELLING; TRANSMISSION ELECTRON MICROSCOPY;

ION IRRADIATION;

SILICON CARBIDE;

EID: 0034462895     PISSN: 03070492     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. Status of silicon carbide composites for fusion
2. Mechanical, thermal, and microstructural properties of neutron-irradiated SiC
3. Microstructural evolution of SiC/SiC composite under irradiation
4. Microstructural stability of SiC/SiC composites under dual-beam ion irradiation
5. Amorphization of SiC under ion and neutron irradiation
6. Effect of fast-neutron irradiation on pyrolytic silicon carbide
7. Thermal conductivity of neutron-irradiation pyrolytic β-silicon carbide
8. Neutron Irradiation-induced voids in β-silicon carbide
9. The expansion of silicon carbide by neutron irradiation at high temperature
10. Low dose irradiation performance of SiC interphase SiC/SiC composites