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Optical Materials

Volumn 27, Issue 5, 2005, Pages 973-976

Single dot optical spectroscopy of silicon nanocrystals: Low temperature measurements

(5) Sychugov, Ilya a Juhasz, Robert a Galeckas, Augustinas a Valenta, Jan b Linnros, Jan a

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

b CHARLES UNIVERSITY (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; ELECTRON BEAM LITHOGRAPHY; PHOTOLUMINESCENCE; PLASMA ETCHING; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM DOTS; SILICON; SPECTROSCOPIC ANALYSIS; THERMOOXIDATION; ULTRAVIOLET RADIATION;

BANDGAP MATERIALS; NANOCRYSTALS; SINGLE DOT SPECTROSCOPY; SPECTRAL RESOLUTION;

NANOSTRUCTURED MATERIALS;

EID: 13444273345 PISSN: 09253467 EISSN: None Source Type: Journal
DOI: 10.1016/j.optmat.2004.08.046 Document Type: Conference Paper

Times cited : (16)

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