Influence of substrate domain boundaries on surface reconstructions of Ga/Si(1 1 1)

Surface Science

Volumn 552, Issue 1-3, 2004, Pages 63-69

  Gangopadhyay, Subhashis ^a   Schmidt, Thomas ^a   Falta, Jens ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

Gallium; Scanning tunneling microscopy; Surface relaxation and reconstruction; Surface stress; Surface structure, morphology, roughness, and topography

Indexed keywords

ANNEALING; COALESCENCE; CRYSTAL ORIENTATION; MIXTURES; MONOLAYERS; NUCLEATION; PHASE TRANSITIONS; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SILICON;

SURFACE RECONSTRUCTIONS; SURFACE STRESS; SURFACE STRUCTURES;

GALLIUM;

EID: 1342326071     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2003.12.038     Document Type: Article

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