Regular defects on the Si(111)-(7 × 7) surface studied by scanning tunneling microscopy

Surface Science

Volumn 406, Issue 1-3, 1998, Pages 229-234

  Yang, H Q ^a,b   Gao, J N ^a   Zhao, Y F ^a,b   Xue, Z Q ^b   Pang, S J ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

Scanning tunneling microscopy; Silicon; Surface defects

Indexed keywords

CRYSTAL DEFECTS; LATTICE CONSTANTS; SCANNING TUNNELING MICROSCOPY;

DOMAIN BOUNDARIES; SURFACE DEFECTS;

SILICON WAFERS;

EID: 0032073989     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00116-2     Document Type: Article

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