High-temperature scanning tunneling microscopy study of Si(111) surface structure changes caused by Ga surface diffusion

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4, 2002, Pages 2176-2182

  Ichikawa, Toshihiro ^a   Onodera, Takeshi ^a   Mizoguchi, Akinori ^a  

^a MEIJI UNIVERSITY   (Japan)

Author keywords

Ga surface diffusion; Ga surface reaction; Ga induced superstructure; High temperature STM; Precursor; Surface structure transition

Indexed keywords

DIFFUSION IN SOLIDS; GALLIUM; HIGH TEMPERATURE ENGINEERING; MOLECULAR DYNAMICS; PHASE TRANSITIONS; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; STACKING FAULTS; SURFACE STRUCTURE;

DIMER ADATOM STACKING FAULT STRUCTURE; SURFACE STRUCTURE CHANGES;

SEMICONDUCTING SILICON;

EID: 0036529569     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.2176     Document Type: Article

References (12)