Organosilicon ion beam for SiC heteroepitaxy

Surface and Coatings Technology

Volumn 177-178, Issue , 2004, Pages 260-263

  Kiuchi, Masato ^a   Matsutani, Takaomi ^a   Takeuchi, Takae ^b   Matsumoto, Takashi ^c   Sugimoto, Satoshi ^c   Goto, Seiichi ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NARA WOMEN'S UNIVERSITY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

Low energy deposition technique; Organosilicon ion beam; SiC heteroepitaxy

Indexed keywords

CRYSTALLIZATION; DEPOSITION; EPITAXIAL GROWTH; ION BEAMS; NANOSTRUCTURED MATERIALS; ORGANOMETALLICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY; THIN FILMS;

ENERGY FLUCTUATION; ION ENERGY;

SILICON CARBIDE;

COATING;

EID: 1342289378     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2003.09.003     Document Type: Article

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