Analysis, circuit modeling, and optimization of mushroom waveguide photodetector (Mushroom-WGPD)

Journal of Lightwave Technology

Volumn 23, Issue 1, 2005, Pages 423-431

  El Batawy, Yasser M ^a   Deen, M Jamal ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

Analytical modeling of photodetectors; Circuit modeling of photodetectors; Modeling of photodiodes; Mushroom photodetectors; Optimization of photodetectors; Parasitics of photodetectors; Photodetectors (PDs); Photodiodes; Waveguide photodetectors

Indexed keywords

CALIBRATION; COMPUTER SIMULATION; INTEGRATED OPTOELECTRONICS; LIGHT ABSORPTION; MATHEMATICAL MODELS; OPTICAL WAVEGUIDES; OPTIMIZATION; PHOTODIODES; TRANSFER FUNCTIONS; WAVEGUIDE COMPONENTS;

ANALYTICAL MODELING; CIRCUIT SIMULATION; MUSHROOM WAVEGUIDE PHOTODETECTOR; PARASITICS EFFECTS;

PHOTODETECTORS;

EID: 13244295550     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2004.834483     Document Type: Article

References (22)

1. K. Kato and Y. Akatsu, "High-speed waveguide photodetectors," in Proc. 7th Int. Conf. InP Related Materials, May 1995, pp. 349-352.
2. A. Bandyopadhy and M. J. Deen, "Photodetector for optical fiber communications," in Photodetectors and Fiber Optics, H. S. Nalwa, Ed. NewYork: Academic, 2001, pp. 307-368.
3. K. Kato, S. Halta, A. Kozen, J. Yoshida, and K. Kawano, "High efficiency waveguide InGaAs PIN photodiode with bandwidth of over 40 GHz," IEEE Photon. Technol. Lett., vol. 3, no. 6, pp. 473-474, Jun. 1991.
4. D. Wake, T. P. Spooner, S. D. Perrin, and M. J. Harlow, "50 GHz InGaAs edge-coupled PIN photodetector," Electron. Lett., vol. 27, pp. 1073-1075, Jun. 1991.
5. A. Umbach, M. Leone, and G. Unterbörsch, "High-frequency behavior of waveguide integrated photodiodes monolithically integrated on InP using optical butt coupling," J. Appl. Phys., vol. 81, pp. 2511-2516, Mar. 1997.
6. K. Kato, "Ultrawide-band/high-frequency photodetectors," IEEE Trans. Microwave Theory Tech., vol. 47, no. 7, pp. 1265-1281, Jul. 1999.
7. S. D. McDougall, M. J. Jubber, O. P. Kowalski, J. H. Marsh, and J. S. Aitchison, "GaAs/AlGaAs waveguide pin photodiodes with nonabsorbing input facets fabricated by quantum well intermixing," Electron. Lett., vol. 36, pp. 749-750, Apr. 2000.
8. 0.48As avalanche photodiode," IEEE Photon. Technol. Lett., vol. 12, no. 4, pp. 416 - 418, Apr. 2000.
9. N. R. Das, Y. M. El-Batawy, and M. J. Deen, "Optoelectronic integrated circuit photoreceivers for fiber-optic telecommunication," in Proc. 1st Int. Syrup. Integrated Optoelectronics, Electrochemical Society, vol. PV2002-4, May 2002, pp. 163 - 194.
10. K. Kato, S. Hata, K. Kawano, J. Yoshida, and A. Kozen, "A high-efficiency 50 GHz InGaAs multimode waveguide photodetector," IEEE J. Quantum Electron., vol. 28, no. 12, pp. 2728-2735, Dec. 1992.
11. K. Kato and J. Yoshida, "Ultrawide-bandwidth 1.55 μm waveguide p-i-n photodiode," in Proc. SPIE - Int. Soc. Optical Engineering, vol. 2149, 1994, pp. 312-319.
12. K. Kato, A. Kozen, Y. Muramoto, Y. Itaya, T. Nagatsuma, and M. Yatia, "110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-μm wavelength," IEEE Photon. Technol. Lett., vol. 6, no. 6, pp. 719-721, Jun. 1994.
13. K. A. Anselm, H. Nie, C. Lenox, P. Yuan, G. Kinsey, J. C. Campbell, and B. G. Streetman, "Performance of thin separate absorption, charge, and multiplication avalanche photodiodes," IEEE J. Quantum Electron., vol. 34, no. 3, pp. 482-490, Mar. 1998.
14. H. Nie, O. Baklenov, P. Yuan, C. Lenox, B. G. Streetman, and J. C. Campbell, "Quantum-dot resonant-cavity separate absorption, charge and multiplication avalanche photodiodes operating at 1.06 μm," IEEE Photon. Technol. Lett., vol. 10, no. 7, pp. 1009-1011, Jul. 1998.
15. Y. M. El-Batawy and M. J. Deen, "Modeling and optimization of resonant cavity enhanced-separated absorption graded charge multiplication-avalanche photodetector (RCE-SAGCM-APD)," IEEE Trans. Electron Devices, vol. 50, no. 3, pp. 790-801, Mar. 2003.
16. Y. M. El-Batawy, M. J. Deen, and N. R. Das, "Analysis, optimization and SPICE modeling of resonant cavity enhanced PIN photodetector," J. Lightw. Technol., vol. 22, no. 9, pp. 2031-2043, Sep. 2003.
17. Y. M. El-Batawy and M. J. Deen, "Modeling of mushroom waveguide photodetector (mushroom-WGPD)," J. Vac. Sci. Technol., vol. 22, pp. 811-815, May 2004, to be published.
18. Y. G. Xiao and M. J. Deen, "Theoretical approach to frequency response of resonant-cavity avalanche photodiodes," in Proc. SPIE, Photodetectors: Materials Devices VI, vol. 4288, Jn. 2001, pp. 21-30.
19. Y. G. Xiao and M. J. Deen, "Frequency response and modeling of resonant-cavity separate absorption, charge and multiplication avalanche photodiodes" J. Lightw. Technol., vol. 19, no. 7, pp. 1010-1022, Jul. 2001.
20. G. Lucovsky, R. F. Schwarz, and R. B. Emmons, "Transit-time considerations in p-i-n diodes," J. Appl. Phys., vol. 35, no. 3, pp. 622-628, Mar. 1964.
21. D. Huber, R. Bauknecht, C. Bergamaschi, M. Bitter, A. Huber, T. Morf, A. Neiger, M. Rohner, I. Schnyder, V. Schwarz, and H. Jäckel, "InP-InGaAs single HBT technology for photoreceiver OEIC's at 40 Gb /s and beyond," J. Lightw. Technol., vol. 18, no. 7, pp. 992-998, Jul. 2000.
22. K. Yang, A. L. Gutierrez-Aitken, X. Zhang, G. I. Haddad, and P. Bhattacharya, "Design, modeling, and characterization of monolithically integrated InP-based (1.55 μm) high-speed (24 Gb/s) p-i-n/HBT front-end photoreceivers," J. Lightw. Technol., vol. 14, no. 8, pp. 1831-1839, Aug. 1996.