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Volumn 46, Issue C, 1997, Pages 115-150

Chapter 4 Photomodulated Thermoreflectance Investigation of Implanted Wafers. Annealing Kinetics of Defects

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING KINETICS; IMPLANTED WAFERS; THERMOREFLECTANCE;

EID: 13044302065     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)60107-6     Document Type: Article
Times cited : (4)

References (68)
  • 1
    • 44949271862 scopus 로고
    • Thermal Wave Characterization of Silicon Implanted with MeV Phosphorus Ions
    • Anjum M., Sandhu G.S., Cherekdjian S., and Weisenberger W. Thermal Wave Characterization of Silicon Implanted with MeV Phosphorus Ions. Nucl. Instrum. Meth. BS5 (1991) 266-268
    • (1991) Nucl. Instrum. Meth. , vol.BS5 , pp. 266-268
    • Anjum, M.1    Sandhu, G.S.2    Cherekdjian, S.3    Weisenberger, W.4
  • 2
    • 40849116390 scopus 로고
    • Willardson R.K., and Beer A.C. (Eds), Academic Press, New York, London Transport and Optical Phenomena
    • Bebb H.B., and Williams E.W. In: Willardson R.K., and Beer A.C. (Eds). Semiconductors and Semimetals 8 (1972), Academic Press, New York, London 262 Transport and Optical Phenomena
    • (1972) Semiconductors and Semimetals , vol.8 , pp. 262
    • Bebb, H.B.1    Williams, E.W.2
  • 4
    • 0019659055 scopus 로고
    • Displacement Criterion for Amorphization of Silicon during Ion-Implantation
    • Christel L.A., Gibbons J.F., and Sigmon T.W. Displacement Criterion for Amorphization of Silicon during Ion-Implantation. J. Appl. Phys. 52 (1981) 7143-7146
    • (1981) J. Appl. Phys. , vol.52 , pp. 7143-7146
    • Christel, L.A.1    Gibbons, J.F.2    Sigmon, T.W.3
  • 5
    • 0026943092 scopus 로고
    • Annealing Kinetics of Defects of Ion-Implanted and Furnace-Annealed Silicon Layers: Thermodynamics Approach
    • Christofides C. Annealing Kinetics of Defects of Ion-Implanted and Furnace-Annealed Silicon Layers: Thermodynamics Approach. Semicond. Sci. Technol. 7 (1992) 1283-1294
    • (1992) Semicond. Sci. Technol. , vol.7 , pp. 1283-1294
    • Christofides, C.1
  • 6
    • 77956702628 scopus 로고
    • Etude de silicium implante a l'arsenic par l'effet de transport. Influence du recuit thermique
    • Christofides C., Jaouen H., and Ghibaudo G. Etude de silicium implante a l'arsenic par l'effet de transport. Influence du recuit thermique. Rev. Phys. Appl. 22 (1987) 407-412
    • (1987) Rev. Phys. Appl. , vol.22 , pp. 407-412
    • Christofides, C.1    Jaouen, H.2    Ghibaudo, G.3
  • 7
    • 30244466374 scopus 로고
    • Electronic Transport Investigation of Arsenic Implanted Silicon. I. Annealing Influence on the Transport Coefficients
    • Christofides C., Jaouen H., and Ghibaudo G. Electronic Transport Investigation of Arsenic Implanted Silicon. I. Annealing Influence on the Transport Coefficients. J. Appl. Phys. 65 (1989) 4832-4839
    • (1989) J. Appl. Phys. , vol.65 , pp. 4832-4839
    • Christofides, C.1    Jaouen, H.2    Ghibaudo, G.3
  • 8
    • 36549096413 scopus 로고
    • Electronic Transport Investigation of Arsenic Implanted Silicon. II. Annealing Kinetics of Defects
    • Christofides C., Ghibaudo G., and Jaouen H. Electronic Transport Investigation of Arsenic Implanted Silicon. II. Annealing Kinetics of Defects. J. Appl. Phys. 65 (1989) 4840-4844
    • (1989) J. Appl. Phys. , vol.65 , pp. 4840-4844
    • Christofides, C.1    Ghibaudo, G.2    Jaouen, H.3
  • 9
    • 0001635856 scopus 로고
    • Photothermal Reflectance Investigation of Processed Silicon. I. Room-temperature Study of the Induced Damage and of the Annealing Kinetics of Defects in Ion-Implanted Wafers
    • Christofides C., Vitkin I.A., and Mandelis A. Photothermal Reflectance Investigation of Processed Silicon. I. Room-temperature Study of the Induced Damage and of the Annealing Kinetics of Defects in Ion-Implanted Wafers. J. Appl. Phys. 67 (1990) 2815-2821
    • (1990) J. Appl. Phys. , vol.67 , pp. 2815-2821
    • Christofides, C.1    Vitkin, I.A.2    Mandelis, A.3
  • 10
    • 0039772405 scopus 로고
    • Quantitative Photopyroelectric Out-of-Phase Spectroscopy of Amorphous Silicon Thin Films Deposited on Crystalline Silicon
    • Christofides C., Mandelis A., Engel A., Bisson M., and Harling G. Quantitative Photopyroelectric Out-of-Phase Spectroscopy of Amorphous Silicon Thin Films Deposited on Crystalline Silicon. Canad. J. Phys. 69 (1991) 317-323
    • (1991) Canad. J. Phys. , vol.69 , pp. 317-323
    • Christofides, C.1    Mandelis, A.2    Engel, A.3    Bisson, M.4    Harling, G.5
  • 11
    • 0028406101 scopus 로고
    • Optical Spectroscopy on Implanted and Annealed Silicon Wafers: Plasma Resonance Wavelength
    • Christofides C., Othonos A., Bisson M., and Boussey-Said J. Optical Spectroscopy on Implanted and Annealed Silicon Wafers: Plasma Resonance Wavelength. J. Appl. Phys. 75 (1994) 3377-3384
    • (1994) J. Appl. Phys. , vol.75 , pp. 3377-3384
    • Christofides, C.1    Othonos, A.2    Bisson, M.3    Boussey-Said, J.4
  • 13
    • 36549094326 scopus 로고
    • Signal Generation in Optically Detecting Thermal-wave Instruments
    • Doka O., Miklos A., and Lorincz A. Signal Generation in Optically Detecting Thermal-wave Instruments. J. Appl. Phys. 63 (1988) 2156-2158
    • (1988) J. Appl. Phys. , vol.63 , pp. 2156-2158
    • Doka, O.1    Miklos, A.2    Lorincz, A.3
  • 14
    • 84869140662 scopus 로고
    • Zur Elektronentheorie der Metalle
    • Drude P. Zur Elektronentheorie der Metalle. Ann. Phys. (Leipzing) 1 (1900) 566-613
    • (1900) Ann. Phys. (Leipzing) , vol.1 , pp. 566-613
    • Drude, P.1
  • 15
    • 0001078652 scopus 로고
    • Auger Coefficients for Highly Doped and Highly Excited Silicon
    • Dziewior J., and Schmid W. Auger Coefficients for Highly Doped and Highly Excited Silicon. Appl. Phys. Lett. 31 (1977) 346-348
    • (1977) Appl. Phys. Lett. , vol.31 , pp. 346-348
    • Dziewior, J.1    Schmid, W.2
  • 16
    • 0027240770 scopus 로고
    • Nonlinear Recombinations in Photoreflectance Characterization of Silicon Wafers
    • Forget B.C., Fournier D., and Gusev V.E. Nonlinear Recombinations in Photoreflectance Characterization of Silicon Wafers. Appl. Surfac. Sci. 63 (1993) 255-259
    • (1993) Appl. Surfac. Sci. , vol.63 , pp. 255-259
    • Forget, B.C.1    Fournier, D.2    Gusev, V.E.3
  • 18
    • 33748490084 scopus 로고
    • Thermal Wave Probing of the Optical, Electronic and Thermal Properties of Semiconductors
    • Fournier D., and Forget B.C. Thermal Wave Probing of the Optical, Electronic and Thermal Properties of Semiconductors. J. de Phys. IV C6 (1991) 241-252
    • (1991) J. de Phys. IV , vol.C6 , pp. 241-252
    • Fournier, D.1    Forget, B.C.2
  • 19
    • 84956097942 scopus 로고
    • Defect Interactions in Semiconductors. I
    • Hannay N.B. (Ed), Reinhold, New York Chapt. 5
    • Fuller C.S. Defect Interactions in Semiconductors. I. In: Hannay N.B. (Ed). Semiconductors (1959), Reinhold, New York Chapt. 5
    • (1959) Semiconductors
    • Fuller, C.S.1
  • 20
    • 84902954732 scopus 로고
    • Ion Implantation in Semiconductors. Part I: Range Distribution Theory and Experiments
    • Gibbons J.F. Ion Implantation in Semiconductors. Part I: Range Distribution Theory and Experiments. Proc. IEEE 56 (1968) 295-320
    • (1968) Proc. IEEE , vol.56 , pp. 295-320
    • Gibbons, J.F.1
  • 21
    • 0346003810 scopus 로고
    • Ion Implantation in Semiconductors. Part II: Damage Production and Annealing
    • Gibbons J.F. Ion Implantation in Semiconductors. Part II: Damage Production and Annealing. Proc. IEEE 60 (1972) 1062-1096
    • (1972) Proc. IEEE , vol.60 , pp. 1062-1096
    • Gibbons, J.F.1
  • 22
    • 0000296722 scopus 로고
    • Spatially Resolved Defect Mapping in Semiconductors using Laser-modulated Thermoreflectance
    • Guidotti D., and van Driel H.M. Spatially Resolved Defect Mapping in Semiconductors using Laser-modulated Thermoreflectance. Appl. Phys. Lett. 47 (1985) 1336-1338
    • (1985) Appl. Phys. Lett. , vol.47 , pp. 1336-1338
    • Guidotti, D.1    van Driel, H.M.2
  • 23
    • 0037868187 scopus 로고
    • The Temperature Dependence of Band-to-Band Auger Recombination in Silicon
    • Huldt L., Nilsson N.G., and Svantesson K.G. The Temperature Dependence of Band-to-Band Auger Recombination in Silicon. Appl. Phys. Lett. 35 (1979) 776-777
    • (1979) Appl. Phys. Lett. , vol.35 , pp. 776-777
    • Huldt, L.1    Nilsson, N.G.2    Svantesson, K.G.3
  • 24
    • 0023382635 scopus 로고
    • Secondary Defects of AS+ Implanted Silicon Measured by Thermal Wave Technique
    • Ishikawa K., Yoshida M., and Inque M. Secondary Defects of AS+ Implanted Silicon Measured by Thermal Wave Technique. Japan. J. Appl. Phys. 26 (1987) L1089-L1091
    • (1987) Japan. J. Appl. Phys. , vol.26
    • Ishikawa, K.1    Yoshida, M.2    Inque, M.3
  • 26
    • 84953655029 scopus 로고
    • Refractive Index of Silicon and Germanium and its Wavelength and Temperature Derivatives
    • Li H.H. Refractive Index of Silicon and Germanium and its Wavelength and Temperature Derivatives. Journal of Physical and Chemical Reference Data (1980) 561-658
    • (1980) Journal of Physical and Chemical Reference Data , pp. 561-658
    • Li, H.H.1
  • 27
    • 36749113985 scopus 로고
    • Photoacoustic Measurements of Ion-Implanted and Laser-annealed GaAs
    • McFarlane R.A., and Hess L.D. Photoacoustic Measurements of Ion-Implanted and Laser-annealed GaAs. Appt. Phys. Lett. 36 (1980) 137-139
    • (1980) Appt. Phys. Lett. , vol.36 , pp. 137-139
    • McFarlane, R.A.1    Hess, L.D.2
  • 29
    • 77956719376 scopus 로고    scopus 로고
    • Effect of Thermal Excitation on the PMTR Signal Generation
    • submitted
    • A. Mandelis M. Nestoros C. Christofides (1996). Effect of Thermal Excitation on the PMTR Signal Generation. J. Appl. Phys. submitted
    • (1996) J. Appl. Phys
    • Mandelis, A.1    Nestoros, M.2    Christofides, C.3
  • 30
    • 0000922802 scopus 로고
    • Absolute Nonradiative Energy-Conversion-Efficiency Spectra in Ti3+ :Al2O3 Crystals Measured by Noncontact Quadrature Photopyroelectric Spectroscopy
    • Mandelis A., Vanniasinkam J., Budhudu S., Othonos A., and Koktas M. Absolute Nonradiative Energy-Conversion-Efficiency Spectra in Ti3+ :Al2O3 Crystals Measured by Noncontact Quadrature Photopyroelectric Spectroscopy. Phys. Rev. B 48 (1993) 6808-6821
    • (1993) Phys. Rev. B , vol.48 , pp. 6808-6821
    • Mandelis, A.1    Vanniasinkam, J.2    Budhudu, S.3    Othonos, A.4    Koktas, M.5
  • 31
    • 0030101924 scopus 로고    scopus 로고
    • Quantitative Deconvolution of Photomodulated Thermoreflectance Signals from Si and Ge Semiconductors
    • Mandelis A., and Wagner R. Quantitative Deconvolution of Photomodulated Thermoreflectance Signals from Si and Ge Semiconductors. Japan. J. Appl. Phys. 35 (1996) 1786-1797
    • (1996) Japan. J. Appl. Phys. , vol.35 , pp. 1786-1797
    • Mandelis, A.1    Wagner, R.2
  • 32
    • 0001533604 scopus 로고
    • Photothermal Reflection versus Temperature: Quantitative Analysis
    • Nestoros M., Forget B.C., Christofides C., and Seas A. Photothermal Reflection versus Temperature: Quantitative Analysis. Phys. Rev. B 51 (1995) 14115-14123
    • (1995) Phys. Rev. B , vol.51 , pp. 14115-14123
    • Nestoros, M.1    Forget, B.C.2    Christofides, C.3    Seas, A.4
  • 33
    • 0020831240 scopus 로고
    • Thermal-Wave Detection and Thin-Film Thickness Measurements with Laser Beam Deflection
    • Opsal J., Rosencwaig A., and Willenborg D. Thermal-Wave Detection and Thin-Film Thickness Measurements with Laser Beam Deflection. Appl. Opt. 22 (1983) 3169-3179
    • (1983) Appl. Opt. , vol.22 , pp. 3169-3179
    • Opsal, J.1    Rosencwaig, A.2    Willenborg, D.3
  • 34
    • 0030270448 scopus 로고    scopus 로고
    • Multi-wavelength Raman Probing of Phosphorus Implanted Silicon Wafers
    • Othonos A., and Christofides C. Multi-wavelength Raman Probing of Phosphorus Implanted Silicon Wafers. Nucl. Instrum. Meth. B 117 (1996) 367-374
    • (1996) Nucl. Instrum. Meth. B , vol.117 , pp. 367-374
    • Othonos, A.1    Christofides, C.2
  • 35
    • 0000587082 scopus 로고
    • Raman Spectroscopy and Spreading Resistance Analysis of Phosphorus Implanted and Annealed Silicon
    • Othonos A., Christofides C., Said J.B., and Bisson M. Raman Spectroscopy and Spreading Resistance Analysis of Phosphorus Implanted and Annealed Silicon. J. Appl. Phys. 75 (1994) 8032-8038
    • (1994) J. Appl. Phys. , vol.75 , pp. 8032-8038
    • Othonos, A.1    Christofides, C.2    Said, J.B.3    Bisson, M.4
  • 37
    • 77956655007 scopus 로고
    • Modular Series on Solid State Devices. I
    • Pierret R.F., and Neudeck G.W. (Eds), Addison-Wesley, Reading, MA
    • Pierret R.F. Modular Series on Solid State Devices. I. In: Pierret R.F., and Neudeck G.W. (Eds). Volume VI Advanced Semiconductor Fundamentals (1987), Addison-Wesley, Reading, MA 188-192
    • (1987) Volume VI Advanced Semiconductor Fundamentals , pp. 188-192
    • Pierret, R.F.1
  • 38
    • 0000724069 scopus 로고
    • Formation of Amorphous Layers by Ion Implantation
    • Prussin S., Margolese D.I., and Tauber R.N. Formation of Amorphous Layers by Ion Implantation. J. Appl. Phys. 57 (1985) 180-185
    • (1985) J. Appl. Phys. , vol.57 , pp. 180-185
    • Prussin, S.1    Margolese, D.I.2    Tauber, R.N.3
  • 39
    • 84915543784 scopus 로고
    • Chemical Interactions Among Defects in Germanium and Silicon
    • Reiss H., Fuller C.S., and Morin F.J. Chemical Interactions Among Defects in Germanium and Silicon. Bell Systems Tech. J. 35 (1956) 535-636
    • (1956) Bell Systems Tech. J. , vol.35 , pp. 535-636
    • Reiss, H.1    Fuller, C.S.2    Morin, F.J.3
  • 40
    • 0020001293 scopus 로고
    • Thermal-Wave Imaging
    • Rosencwaig A. Thermal-Wave Imaging. Science 218 (1982) 223-228
    • (1982) Science , vol.218 , pp. 223-228
    • Rosencwaig, A.1
  • 41
    • 0001617216 scopus 로고
    • Thermal Wave Characterization and Inspection of Semiconductor Materials and Devices. I
    • Mandelis A. (Ed), North-Holland, New York Chapt. 5
    • Rosencwaig A. Thermal Wave Characterization and Inspection of Semiconductor Materials and Devices. I. In: Mandelis A. (Ed). Photoacoustic and Thermal Wave Phenomena in Semiconductors (1987), North-Holland, New York Chapt. 5
    • (1987) Photoacoustic and Thermal Wave Phenomena in Semiconductors
    • Rosencwaig, A.1
  • 42
    • 77956734418 scopus 로고
    • Thermal Wave Monitoring and Imaging of Electronic Materials and Devices
    • Mandelis A. (Ed), PTR Prentice Hall, Englewood Cliffs, NJ Chapt. 4 Progress in Photothermal and Photoacoustic Science and Technology Series
    • Rosencwaig A. Thermal Wave Monitoring and Imaging of Electronic Materials and Devices. In: Mandelis A. (Ed). Non-Destructive Evaluation II (1994), PTR Prentice Hall, Englewood Cliffs, NJ Chapt. 4 Progress in Photothermal and Photoacoustic Science and Technology Series
    • (1994) Non-Destructive Evaluation , vol.II
    • Rosencwaig, A.1
  • 44
    • 0022664923 scopus 로고
    • Detection of Thermal Waves Through Modulated Optical Transmittance and Modulated Optical Scattering
    • Rosencwaig A., Opsal J., Smith W.L., and Willenborg D.L. Detection of Thermal Waves Through Modulated Optical Transmittance and Modulated Optical Scattering. J. Appl. Phys. 59 (1986) 1392-1394
    • (1986) J. Appl. Phys. , vol.59 , pp. 1392-1394
    • Rosencwaig, A.1    Opsal, J.2    Smith, W.L.3    Willenborg, D.L.4
  • 46
    • 0043176941 scopus 로고
    • Photothermal Displacement of a Semiconductor Surface
    • Sablikov V.A. Photothermal Displacement of a Semiconductor Surface. Sou. Phys. Semicond. 21 (1987) 1319-1322
    • (1987) Sou. Phys. Semicond. , vol.21 , pp. 1319-1322
    • Sablikov, V.A.1
  • 47
    • 0022685287 scopus 로고
    • Relaxation of Ion Implant Damage in Silicon Wafers at Room Temperature Measured by Thermal Waves and Double Implant Sheet Resistance
    • Schuur J., Waters C., Maneval J., Tripsis N., Rosencwaig A., Taylor M., Smith W.L., Golding L., and Opsal J. Relaxation of Ion Implant Damage in Silicon Wafers at Room Temperature Measured by Thermal Waves and Double Implant Sheet Resistance. Nucl. Instrum. Meth. B21 (1987) 554-558
    • (1987) Nucl. Instrum. Meth. , vol.B21 , pp. 554-558
    • Schuur, J.1    Waters, C.2    Maneval, J.3    Tripsis, N.4    Rosencwaig, A.5    Taylor, M.6    Smith, W.L.7    Golding, L.8    Opsal, J.9
  • 48
    • 0029328227 scopus 로고
    • Photothermal Reflectance Investigation of Implanted Silicon: The Influence of Thermal Annealing
    • Seas A., and Christofides C. Photothermal Reflectance Investigation of Implanted Silicon: The Influence of Thermal Annealing. Appl. Phys. Lett. 66 (1995) 3346-3348
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 3346-3348
    • Seas, A.1    Christofides, C.2
  • 49
    • 0004278609 scopus 로고
    • Cambridge University Press, Cambridge, UK 321
    • Smith R.A. Semiconductors. 2nd ed. (1978), Cambridge University Press, Cambridge, UK 321
    • (1978) Semiconductors. 2nd ed.
    • Smith, R.A.1
  • 51
    • 0021902140 scopus 로고
    • Ultra-High-Resolution Dose Uniformity Monitoring with Thermal Waves
    • Smith W.L., Taylor M.W., and Schuur J. Ultra-High-Resolution Dose Uniformity Monitoring with Thermal Waves. SPIE Proc. 530 (1985) 201-205
    • (1985) SPIE Proc. , vol.530 , pp. 201-205
    • Smith, W.L.1    Taylor, M.W.2    Schuur, J.3
  • 54
    • 0346782801 scopus 로고
    • Secondary Defects in Phosphorus-Implanted Silicon
    • Tamura M. Secondary Defects in Phosphorus-Implanted Silicon. Appl. Phys. Lett. 23 (1973) 651-653
    • (1973) Appl. Phys. Lett. , vol.23 , pp. 651-653
    • Tamura, M.1
  • 55
    • 0022809230 scopus 로고
    • A New Non-Contact Method to Measure Temperature of the Surface of Semiconductor Wafers
    • Tomita T., Kinosada T., Yamashita T., Shiota M., and Sakurai T. A New Non-Contact Method to Measure Temperature of the Surface of Semiconductor Wafers. Japan. J. Appl Phys. 25 (1986) L925-L927
    • (1986) Japan. J. Appl Phys. , vol.25
    • Tomita, T.1    Kinosada, T.2    Yamashita, T.3    Shiota, M.4    Sakurai, T.5
  • 57
    • 0040992937 scopus 로고
    • Experimental Study on the Correlation Between Thermal-Wave Signals and Dopant Profiles for Silicon-Implanted GaAs
    • Uchitomi N., Mikami H., Toyoda N., and Nii R. Experimental Study on the Correlation Between Thermal-Wave Signals and Dopant Profiles for Silicon-Implanted GaAs. Appl. Phys. Lett. 52 (1988) 30-32
    • (1988) Appl. Phys. Lett. , vol.52 , pp. 30-32
    • Uchitomi, N.1    Mikami, H.2    Toyoda, N.3    Nii, R.4
  • 58
    • 0021503449 scopus 로고
    • Photoacoustic Effects in Finite Semiconductors. Sou
    • Vasilev A.N., and Sandomirskii V.B. Photoacoustic Effects in Finite Semiconductors. Sou. Phys. Semicond. 18 (1984) 1095-1099
    • (1984) Phys. Semicond. , vol.18 , pp. 1095-1099
    • Vasilev, A.N.1    Sandomirskii, V.B.2
  • 59
    • 0012371096 scopus 로고
    • Laser-Induced Phothermal Reflectance Investigation of Silicon Damaged by Arsenic Ion Implantation: A Temperature Study
    • Vitkin I.A., Christofides C., and Mandelis A. Laser-Induced Phothermal Reflectance Investigation of Silicon Damaged by Arsenic Ion Implantation: A Temperature Study. Appl. Phys. Lett. 54 (1989) 2392-2394
    • (1989) Appl. Phys. Lett. , vol.54 , pp. 2392-2394
    • Vitkin, I.A.1    Christofides, C.2    Mandelis, A.3
  • 60
    • 0001452243 scopus 로고
    • Photothermal Reflectance Investigation of Processed Silicon. II Signal Generation and Lattice Temperature in Ion-Implanted and Amorphous Thin Layers
    • Vitkin I.A., Christofides C., and Mandelis A. Photothermal Reflectance Investigation of Processed Silicon. II Signal Generation and Lattice Temperature in Ion-Implanted and Amorphous Thin Layers. J. Appl. Phys. 67 (1990) 2822-2830
    • (1990) J. Appl. Phys. , vol.67 , pp. 2822-2830
    • Vitkin, I.A.1    Christofides, C.2    Mandelis, A.3
  • 63
    • 0026253956 scopus 로고
    • Single-Beam Thermowave Analysis of Ion Implanted and Laser Annealed Semiconductors
    • Wagner M., and Geiler H.D. Single-Beam Thermowave Analysis of Ion Implanted and Laser Annealed Semiconductors. Measurement Sci. Technol. 2 (1991) 1088-1093
    • (1991) Measurement Sci. Technol. , vol.2 , pp. 1088-1093
    • Wagner, M.1    Geiler, H.D.2
  • 64
    • 3743135005 scopus 로고
    • A Generalized Calculation of the Temperature and Drude Photo-Modulated Optical Reflectance Coefficients in Semiconductors
    • Wagner R., and Mandelis A. A Generalized Calculation of the Temperature and Drude Photo-Modulated Optical Reflectance Coefficients in Semiconductors. J. Phys. Chem. Solids 52 (1991) 1061-1070
    • (1991) J. Phys. Chem. Solids , vol.52 , pp. 1061-1070
    • Wagner, R.1    Mandelis, A.2
  • 65
    • 0026413553 scopus 로고
    • Single-Beam Thermowave Analysis of Semiconductors
    • Wagner M., Winkler N., and Geiler H.D. Single-Beam Thermowave Analysis of Semiconductors. Appl. Surface. Sci. 50 (1991) 373-376
    • (1991) Appl. Surface. Sci. , vol.50 , pp. 373-376
    • Wagner, M.1    Winkler, N.2    Geiler, H.D.3
  • 66
    • 0018441843 scopus 로고
    • Temperature Dependence of the Optical Properties of Silicon
    • Weakliem H.A., and Redfield D. Temperature Dependence of the Optical Properties of Silicon. J. Appl. Phys. 50 (1979) 1491-1493
    • (1979) J. Appl. Phys. , vol.50 , pp. 1491-1493
    • Weakliem, H.A.1    Redfield, D.2
  • 67
    • 0022682390 scopus 로고
    • Thermal Wave Implant Dosimetry for Process Control on Product Wafers
    • Wendman M.A., and Smith W.L. Thermal Wave Implant Dosimetry for Process Control on Product Wafers. Nucl. Instrum. Meth. B21 (1987) 559-562
    • (1987) Nucl. Instrum. Meth. , vol.B21 , pp. 559-562
    • Wendman, M.A.1    Smith, W.L.2
  • 68
    • 0024101735 scopus 로고
    • Modulated Optical Reflectance Measurements on Amorphous Silicon Layers and Detection of Residual Defects
    • Wurm S., Alpern P., Savignac D., and Kakoschke R. Modulated Optical Reflectance Measurements on Amorphous Silicon Layers and Detection of Residual Defects. Appl. Phys. A47 (1988) 147-155
    • (1988) Appl. Phys. , vol.A47 , pp. 147-155
    • Wurm, S.1    Alpern, P.2    Savignac, D.3    Kakoschke, R.4


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