Bandwidth enhancement of transimpedance amplifier by a capacitive-peaking design

IEEE Journal of Solid-State Circuits

Volumn 34, Issue 8, 1999, Pages 1167-1170

  Chien, Feng Tso ^a   Chan, Yi Jen ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITANCE; CAPACITORS; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; TRANSFER FUNCTIONS;

BUTTERWORTH TYPE TRANSIMPEDANCE AMPLIFIER; CAPACITIVE PEAKING TECHNIQUE; TRANSIMPEDANCE AMPLIFIER;

AMPLIFIERS (ELECTRONIC);

EID: 0033169546     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.777115     Document Type: Article

References (16)

1. C. S. Harder, B. V. Zeghbroeck, H. Meier, W. Patrick, and P. Vettiger, "5.2-GHz bandwidth monolithic GaAs optoelectronic receiver," IEEE Electron Device Lett., vol. 9, no. 4, pp. 171-173, 1988.
2. V. Hurm, J. Rosenzweig, M. Ludwig, W. Benz, M. Berroth, A. Huelsman, G. Kaufel, K. Koehler, B. Raynor, and J. Schneider, "8.2 GHz bandwidth monolithic integrated opto-electronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMT's," Electron. Lett., vol. 27, pp. 734-735, 1991.
3. A. A. Ketterson, J. W. Seo, M. H. Tong, K. L. Nummila, J. J. Morikuni, K. Y. Cheng, S. M. Kang, and I. Adesida, "A MODFET-Based optoelectronic integrated circuit receiver for optical interconnects," IEEE Trans. Electron Devices, vol. 40, no. 8, pp. 1406-1416, 1993.
4. Y. Zebda, R. Lai, P. Bhattacharya, D. Pavlidis, P. R. Berger, and T. L. Brock, "Monolithically integrated InP-based front-end photoreceivers," IEEE Trans. Electron Devices, vol. 38, no. 6, pp. 1324-1333, 1991.
5. N. Ohkawa, T. Sugie, and Y. Hayashi, "A highly sensitive balanced receiver for 2.5 Gb/s heterodyne detection systems," IEEE Photon. Technol. Lett., vol. 3, no. 4, pp. 375-377, 1991.
6. N. Scheinberg, R. J. Bayruns, and T. M. Laverick, "Monolithic GaAs transimpedance amplifier for fiber-optic receivers," IEEE J. Solid-State Circuits, vol. 26, no. 12, pp. 1834-1839, 1991.
7. K. Yang, A. L. Gutierrez-Aitken, X. Zhang, G. I. Haddad, and P. Bhattacharya, "Design, modeling, and characterization of monolithically integrated InP-based (1.55 μm) high-speed (24Gb/s) p-i-n/HBT front-end photoreceivers," J. Lightwave Technol., vol. 14, no. 8, pp. 1831-1839, 1996.
8. J. J. Morikuni and S. M. Kang, "An analysis of inductive peaking in photoreceiver design," J. Lightwave Technol., vol. 10, no. 10, pp. 1426-1437, 1992.
9. N. Ohkawa, "Fiber-optic multigigabit GaAs MIC front-end circuit with inductor peaking," J. Lightwave Technol., vol. 6, no. 11, pp. 1665-1671, 1988.
10. H. Kikuchi, Y. Miyagawa, and T. Kimura, "Broad-band GaAs monolithic equalizing amplifier for multigigabit-per-second optical receivers," IEEE Trans. Microwave Theory Tech., vol. 38, no. 12, pp. 1916-1923, 1990.
11. M. Abraham, "Design of Butterworth-type transimpedance and bootstrap-transimpedance pre-amplifiers for fiber-optic receivers," IEEE Trans. Circuits Syst., vol. CAS-29, no. 6, pp. 375-382, 1982.
12. Z. Chang and W. M. C. Sansen, "Stability and noise performance of constant transimpedance amplifier with inductive source," IEEE Trans. Circuits Syst., vol. 36, no. 2, pp. 264-271, 1989.
13. E. M. Cherry, "Input impedance and output impedance of feedback amplifiers," Proc. Inst. Elect. Eng., vol. 143, no. 4, pp. 195-201, 1996.
14. K. Honjo, T. Sugiura, and H. Itoh, "Ultra-broad-band GaAs monolithic amplifier," IEEE Trans. Microwave Theory Tech., vol. MTT-30, no. 7, pp. 1027-1033, 1982.
15. A. Payne and C. Toumazou, "Analog amplifiers: Classification and generalization," IEEE Trans. Circuit Theory, vol. 43, no. 1, pp. 43-50, 1996.
16. E. Bruun, "Feedback analysis of transimpedance operation amplifier circuits," IEEE Trans. Circuit Theory, vol. 40, no. 4, pp. 275-278, 1993.