A novel interpretation of transistor S-Parameters by poles and zeros for RF 1C circuit design

IEEE Transactions on Microwave Theory and Techniques

Volumn 49, Issue 2, 2001, Pages 406-409

  Lu, Shey Shi ^a   Meng, Chin Chun ^a   Chen, To Wei ^a   Chen, Hsiao Chin ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Poles; S parameters; Transistors; Zeros

Indexed keywords

SMITH CHART; SOURCE SERIES FEEDBACK; TWO POLE APPROXIMATION;

APPROXIMATION THEORY; CALCULATIONS; FREQUENCY RESPONSE; INTEGRATED CIRCUIT LAYOUT; MOSFET DEVICES; POLES AND ZEROS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

SCATTERING PARAMETERS;

EID: 0035249294     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.903109     Document Type: Article

References (4)

1. B. Bayrajtariglu, N. Camilleri, and S. A. Lambert, "Microwave performance of n-p-n and p-n-p AlGaAs/GaAs heterojunction bipolar transistors," IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1869-1873, Dec. 1988.
2. P. R. Gray and R. G. Meyer, Analysis and Design of Analog Integrated Circuits. New York: Wiley, 1993, pp. 579-584.
3. A. S. Sedra and K. C. Smith, Microelectronic Circuits, 4th ed. Oxford, U.K.: Oxford Univ. Press, 1993, pp. 595-601.
4. Y. Aoki and Y. Hirano, "High-power GaAs FETs," in High Power GaAs FET Amplifiers, J. L. B. Walker, Ed. Norwood, MA: Artech House, 1993, p. 81.