Suppression of thermal atomic interdiffusion in C-doped InGaAs/AlGaAs quantum well laser structures using TiO2 dielectric layers

Applied Physics Letters

Volumn 85, Issue 23, 2004, Pages 5583-5585

  Gareso, P L ^a   Buda, M ^a   Fu, L ^a   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; ANNEALING; DIELECTRIC MATERIALS; DIFFUSION IN SOLIDS; DOPING (ADDITIVES); IMPURITIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CAPPING LAYERS; DISORDERING; ENERGY SHIFT; THERMAL INTERMIXING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 12844280015     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1833563     Document Type: Article

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